JPS5840836A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5840836A
JPS5840836A JP56138911A JP13891181A JPS5840836A JP S5840836 A JPS5840836 A JP S5840836A JP 56138911 A JP56138911 A JP 56138911A JP 13891181 A JP13891181 A JP 13891181A JP S5840836 A JPS5840836 A JP S5840836A
Authority
JP
Japan
Prior art keywords
pellet
probe
cleaned
coat layers
imperfect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56138911A
Other languages
English (en)
Japanese (ja)
Other versions
JPH023544B2 (enExample
Inventor
Nobuo Hashizume
橋爪　伸夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP56138911A priority Critical patent/JPS5840836A/ja
Publication of JPS5840836A publication Critical patent/JPS5840836A/ja
Publication of JPH023544B2 publication Critical patent/JPH023544B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P74/00—

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
JP56138911A 1981-09-03 1981-09-03 半導体装置の製造方法 Granted JPS5840836A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56138911A JPS5840836A (ja) 1981-09-03 1981-09-03 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56138911A JPS5840836A (ja) 1981-09-03 1981-09-03 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5840836A true JPS5840836A (ja) 1983-03-09
JPH023544B2 JPH023544B2 (enExample) 1990-01-24

Family

ID=15233017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56138911A Granted JPS5840836A (ja) 1981-09-03 1981-09-03 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5840836A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63298171A (ja) * 1987-05-29 1988-12-05 Tokyo Electron Ltd ウエハプロ−バ
JP2006086244A (ja) * 2004-09-15 2006-03-30 Renesas Technology Corp 半導体装置の製造方法
JP2006114812A (ja) * 2004-10-18 2006-04-27 Mitsubishi Electric Corp 半導体デバイスの特性測定方法および測定装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5324267A (en) * 1976-08-18 1978-03-06 Nec Corp Production of beam lead type sem iconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5324267A (en) * 1976-08-18 1978-03-06 Nec Corp Production of beam lead type sem iconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63298171A (ja) * 1987-05-29 1988-12-05 Tokyo Electron Ltd ウエハプロ−バ
JP2006086244A (ja) * 2004-09-15 2006-03-30 Renesas Technology Corp 半導体装置の製造方法
JP2006114812A (ja) * 2004-10-18 2006-04-27 Mitsubishi Electric Corp 半導体デバイスの特性測定方法および測定装置

Also Published As

Publication number Publication date
JPH023544B2 (enExample) 1990-01-24

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