JPS5828731B2 - ゼツエンキバンジヨウヘノ シリコンソウサクセイホウホウ - Google Patents

ゼツエンキバンジヨウヘノ シリコンソウサクセイホウホウ

Info

Publication number
JPS5828731B2
JPS5828731B2 JP49101792A JP10179274A JPS5828731B2 JP S5828731 B2 JPS5828731 B2 JP S5828731B2 JP 49101792 A JP49101792 A JP 49101792A JP 10179274 A JP10179274 A JP 10179274A JP S5828731 B2 JPS5828731 B2 JP S5828731B2
Authority
JP
Japan
Prior art keywords
layer
silicon
region
substrate
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP49101792A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5099272A (enrdf_load_stackoverflow
Inventor
エルウツド ビーン ケネス
ケイス スメルツアー ロナルド
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPS5099272A publication Critical patent/JPS5099272A/ja
Publication of JPS5828731B2 publication Critical patent/JPS5828731B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP49101792A 1973-12-28 1974-09-04 ゼツエンキバンジヨウヘノ シリコンソウサクセイホウホウ Expired JPS5828731B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US42922873A 1973-12-28 1973-12-28

Publications (2)

Publication Number Publication Date
JPS5099272A JPS5099272A (enrdf_load_stackoverflow) 1975-08-06
JPS5828731B2 true JPS5828731B2 (ja) 1983-06-17

Family

ID=23702356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49101792A Expired JPS5828731B2 (ja) 1973-12-28 1974-09-04 ゼツエンキバンジヨウヘノ シリコンソウサクセイホウホウ

Country Status (4)

Country Link
JP (1) JPS5828731B2 (enrdf_load_stackoverflow)
DE (1) DE2460653C2 (enrdf_load_stackoverflow)
FR (1) FR2256537B1 (enrdf_load_stackoverflow)
GB (1) GB1494328A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54110783A (en) * 1978-02-20 1979-08-30 Hitachi Ltd Semiconductor substrate and its manufacture
DE3347997C2 (enrdf_load_stackoverflow) * 1982-01-06 1991-01-24 Canon K.K., Tokio/Tokyo, Jp
JPS6066825A (ja) * 1983-09-22 1985-04-17 Toshiba Corp 半導体装置の製造方法
US5416354A (en) * 1989-01-06 1995-05-16 Unitrode Corporation Inverted epitaxial process semiconductor devices
DE3922671A1 (de) * 1989-07-10 1991-01-24 Siemens Ag Akustoelektronisches bauelement mit einer oberflaechenwellenanordnung und einer elektronischen halbleiterschaltung

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4936792B1 (enrdf_load_stackoverflow) * 1970-10-15 1974-10-03

Also Published As

Publication number Publication date
DE2460653A1 (de) 1975-07-10
FR2256537B1 (enrdf_load_stackoverflow) 1979-03-16
GB1494328A (en) 1977-12-07
JPS5099272A (enrdf_load_stackoverflow) 1975-08-06
DE2460653C2 (de) 1986-02-06
FR2256537A1 (enrdf_load_stackoverflow) 1975-07-25

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