JPS58175824A - プラズマ気相反応用装置 - Google Patents

プラズマ気相反応用装置

Info

Publication number
JPS58175824A
JPS58175824A JP58052264A JP5226483A JPS58175824A JP S58175824 A JPS58175824 A JP S58175824A JP 58052264 A JP58052264 A JP 58052264A JP 5226483 A JP5226483 A JP 5226483A JP S58175824 A JPS58175824 A JP S58175824A
Authority
JP
Japan
Prior art keywords
semiconductor
plasma
reactive gas
substrate
electric field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58052264A
Other languages
English (en)
Japanese (ja)
Other versions
JPH038102B2 (enrdf_load_stackoverflow
Inventor
Shunpei Yamazaki
舜平 山崎
Tadashi Yamashita
永田　勇二郎
Motoyuki Suzuki
Chiharu Takayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Hitachi Industry and Control Solutions Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Hitachi Video Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd, Hitachi Video Engineering Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP58052264A priority Critical patent/JPS58175824A/ja
Publication of JPS58175824A publication Critical patent/JPS58175824A/ja
Publication of JPH038102B2 publication Critical patent/JPH038102B2/ja
Priority to JP3333924A priority patent/JP2540684B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Chemical Vapour Deposition (AREA)
JP58052264A 1983-03-28 1983-03-28 プラズマ気相反応用装置 Granted JPS58175824A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP58052264A JPS58175824A (ja) 1983-03-28 1983-03-28 プラズマ気相反応用装置
JP3333924A JP2540684B2 (ja) 1983-03-28 1991-11-22 珪素を主成分とする半導体被膜の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP58052264A JPS58175824A (ja) 1983-03-28 1983-03-28 プラズマ気相反応用装置
JP3333924A JP2540684B2 (ja) 1983-03-28 1991-11-22 珪素を主成分とする半導体被膜の作製方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP55147304A Division JPS5771127A (en) 1980-10-21 1980-10-21 Manufacture of semiamorphous semiconductor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP3333924A Division JP2540684B2 (ja) 1983-03-28 1991-11-22 珪素を主成分とする半導体被膜の作製方法

Publications (2)

Publication Number Publication Date
JPS58175824A true JPS58175824A (ja) 1983-10-15
JPH038102B2 JPH038102B2 (enrdf_load_stackoverflow) 1991-02-05

Family

ID=26392866

Family Applications (2)

Application Number Title Priority Date Filing Date
JP58052264A Granted JPS58175824A (ja) 1983-03-28 1983-03-28 プラズマ気相反応用装置
JP3333924A Expired - Lifetime JP2540684B2 (ja) 1983-03-28 1991-11-22 珪素を主成分とする半導体被膜の作製方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP3333924A Expired - Lifetime JP2540684B2 (ja) 1983-03-28 1991-11-22 珪素を主成分とする半導体被膜の作製方法

Country Status (1)

Country Link
JP (2) JPS58175824A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5126164A (en) * 1988-06-06 1992-06-30 Research Development Corporation Of Japan Method of forming a thin polymeric film by plasma reaction under atmospheric pressure
JPH0620952A (ja) * 1983-03-28 1994-01-28 Semiconductor Energy Lab Co Ltd 珪素を主成分とする半導体被膜の作製方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4540742B2 (ja) * 2008-01-25 2010-09-08 三井造船株式会社 原子層成長装置および薄膜形成方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113164A (en) * 1976-03-19 1977-09-22 Hitachi Ltd Removal of organic agent

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5743891Y2 (enrdf_load_stackoverflow) * 1978-11-30 1982-09-28
JPS5771127A (en) * 1980-10-21 1982-05-01 Semiconductor Energy Lab Co Ltd Manufacture of semiamorphous semiconductor
JPS58175824A (ja) * 1983-03-28 1983-10-15 Semiconductor Energy Lab Co Ltd プラズマ気相反応用装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113164A (en) * 1976-03-19 1977-09-22 Hitachi Ltd Removal of organic agent

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0620952A (ja) * 1983-03-28 1994-01-28 Semiconductor Energy Lab Co Ltd 珪素を主成分とする半導体被膜の作製方法
US5126164A (en) * 1988-06-06 1992-06-30 Research Development Corporation Of Japan Method of forming a thin polymeric film by plasma reaction under atmospheric pressure
US5733610A (en) * 1988-06-06 1998-03-31 Research Development Corporation Of Japan Atmospheric pressure plasma reaction method of forming a hydrophobic film

Also Published As

Publication number Publication date
JPH038102B2 (enrdf_load_stackoverflow) 1991-02-05
JPH0620952A (ja) 1994-01-28
JP2540684B2 (ja) 1996-10-09

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