JPS58171826A - 酸素析出物粒子の密度及び分布の調整方法 - Google Patents

酸素析出物粒子の密度及び分布の調整方法

Info

Publication number
JPS58171826A
JPS58171826A JP57200515A JP20051582A JPS58171826A JP S58171826 A JPS58171826 A JP S58171826A JP 57200515 A JP57200515 A JP 57200515A JP 20051582 A JP20051582 A JP 20051582A JP S58171826 A JPS58171826 A JP S58171826A
Authority
JP
Japan
Prior art keywords
temperature
oxygen
precipitate
annealing
heated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57200515A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0319699B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
バ−ナ−ド・カ−ト・ビシヨフ
ウイリアム・ジヨン・パトリツク
ト−マス・ハイド・ストラドウイツク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS58171826A publication Critical patent/JPS58171826A/ja
Publication of JPH0319699B2 publication Critical patent/JPH0319699B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/024—Defect control-gettering and annealing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP57200515A 1982-03-26 1982-11-17 酸素析出物粒子の密度及び分布の調整方法 Granted JPS58171826A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US362448 1982-03-26
US06/362,448 US4437922A (en) 1982-03-26 1982-03-26 Method for tailoring oxygen precipitate particle density and distribution silicon wafers

Publications (2)

Publication Number Publication Date
JPS58171826A true JPS58171826A (ja) 1983-10-08
JPH0319699B2 JPH0319699B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-03-15

Family

ID=23426164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57200515A Granted JPS58171826A (ja) 1982-03-26 1982-11-17 酸素析出物粒子の密度及び分布の調整方法

Country Status (4)

Country Link
US (1) US4437922A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0090320B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS58171826A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3370663D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03185831A (ja) * 1989-12-15 1991-08-13 Komatsu Denshi Kinzoku Kk 半導体装置の製造方法
JPH05102167A (ja) * 1991-10-07 1993-04-23 Shin Etsu Handotai Co Ltd シリコンの熱処理方法
JPH0697179A (ja) * 1992-09-09 1994-04-08 Mitsubishi Materials Corp シリコンウェーハのｉｇ熱処理方法
JP2004134439A (ja) * 2002-10-08 2004-04-30 Shin Etsu Handotai Co Ltd アニールウェーハおよびアニールウェーハの製造方法
JPWO2003009365A1 (ja) * 2001-07-10 2004-11-11 信越半導体株式会社 シリコンウェーハの製造方法、シリコンエピタキシャルウェーハの製造方法、および、シリコンエピタキシャルウェーハ
JP2006527493A (ja) * 2003-06-10 2006-11-30 エス．オー．アイ．テック、シリコン、オン、インシュレター、テクノロジーズ 改良された安定化アニール方法

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US4597804A (en) * 1981-03-11 1986-07-01 Fujitsu Limited Methods of forming denuded zone in wafer by intrinsic gettering and forming bipolar transistor therein
JPS59124136A (ja) * 1982-12-28 1984-07-18 Toshiba Corp 半導体ウエハの処理方法
US4548654A (en) * 1983-06-03 1985-10-22 Motorola, Inc. Surface denuding of silicon wafer
US4505759A (en) * 1983-12-19 1985-03-19 Mara William C O Method for making a conductive silicon substrate by heat treatment of oxygenated and lightly doped silicon single crystals
EP0165364B1 (fr) * 1984-06-20 1988-09-07 International Business Machines Corporation Procédé de standardisation et de stabilisation de tranches semiconductrices
JPS6310573A (ja) * 1986-07-02 1988-01-18 Oki Electric Ind Co Ltd 半導体装置の製造方法
US4849033A (en) * 1988-04-21 1989-07-18 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Annealing Group III-V compound doped silicon-germanium alloy for improved thermo-electric conversion efficiency
JPH02263792A (ja) * 1989-03-31 1990-10-26 Shin Etsu Handotai Co Ltd シリコンの熱処理方法
US5096839A (en) * 1989-09-20 1992-03-17 Kabushiki Kaisha Toshiba Silicon wafer with defined interstitial oxygen concentration
US5066359A (en) * 1990-09-04 1991-11-19 Motorola, Inc. Method for producing semiconductor devices having bulk defects therein
EP0502471A3 (en) * 1991-03-05 1995-10-11 Fujitsu Ltd Intrinsic gettering of a silicon substrate
JP2572512B2 (ja) * 1992-09-24 1997-01-16 信越半導体株式会社 拡散型シリコン素子基板の製造方法
JP2874834B2 (ja) * 1994-07-29 1999-03-24 三菱マテリアル株式会社 シリコンウェーハのイントリンシックゲッタリング処理法
US5611855A (en) * 1995-01-31 1997-03-18 Seh America, Inc. Method for manufacturing a calibration wafer having a microdefect-free layer of a precisely predetermined depth
US5593494A (en) * 1995-03-14 1997-01-14 Memc Electronic Materials, Inc. Precision controlled precipitation of oxygen in silicon
US5994761A (en) 1997-02-26 1999-11-30 Memc Electronic Materials Spa Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
SG105513A1 (en) * 1997-04-09 2004-08-27 Memc Electronics Materials Inc Low defect density, ideal oxygen precipitating silicon
US5882989A (en) * 1997-09-22 1999-03-16 Memc Electronic Materials, Inc. Process for the preparation of silicon wafers having a controlled distribution of oxygen precipitate nucleation centers
US6828690B1 (en) * 1998-08-05 2004-12-07 Memc Electronic Materials, Inc. Non-uniform minority carrier lifetime distributions in high performance silicon power devices
DE69928434T2 (de) 1998-09-02 2006-07-27 Memc Electronic Materials, Inc. Wärmebehandelte siliziumplättchen mit verbesserter eigengetterung
WO2000013211A2 (en) 1998-09-02 2000-03-09 Memc Electronic Materials, Inc. Silicon on insulator structure from low defect density single crystal silicon
JP4405083B2 (ja) 1998-09-02 2010-01-27 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 理想的な酸素析出シリコンウエハの製造方法
US6336968B1 (en) 1998-09-02 2002-01-08 Memc Electronic Materials, Inc. Non-oxygen precipitating czochralski silicon wafers
DE69908965T2 (de) 1998-10-14 2004-05-13 Memc Electronic Materials, Inc. Wärmegetempertes einkristallines silizium mit niedriger fehlerdichte
JP2000154070A (ja) * 1998-11-16 2000-06-06 Suminoe Textile Co Ltd セラミックス三次元構造体及びその製造方法
TW505710B (en) * 1998-11-20 2002-10-11 Komatsu Denshi Kinzoku Kk Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon single crystal wafer
US6284384B1 (en) 1998-12-09 2001-09-04 Memc Electronic Materials, Inc. Epitaxial silicon wafer with intrinsic gettering
US20030051656A1 (en) 1999-06-14 2003-03-20 Charles Chiun-Chieh Yang Method for the preparation of an epitaxial silicon wafer with intrinsic gettering
US6635587B1 (en) 1999-09-23 2003-10-21 Memc Electronic Materials, Inc. Method for producing czochralski silicon free of agglomerated self-interstitial defects
US6339016B1 (en) 2000-06-30 2002-01-15 Memc Electronic Materials, Inc. Method and apparatus for forming an epitaxial silicon wafer with a denuded zone
JP2004503085A (ja) * 2000-06-30 2004-01-29 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 削剥領域を備えたシリコンウエハの製造方法及び製造装置
US6599815B1 (en) 2000-06-30 2003-07-29 Memc Electronic Materials, Inc. Method and apparatus for forming a silicon wafer with a denuded zone
US6897084B2 (en) * 2001-04-11 2005-05-24 Memc Electronic Materials, Inc. Control of oxygen precipitate formation in high resistivity CZ silicon
TW541581B (en) * 2001-04-20 2003-07-11 Memc Electronic Materials Method for the preparation of a semiconductor substrate with a non-uniform distribution of stabilized oxygen precipitates
JP4566478B2 (ja) 2001-08-09 2010-10-20 シルトロニック・ジャパン株式会社 シリコン半導体基板およびその製造方法
KR100481476B1 (ko) * 2002-11-19 2005-04-07 주식회사 실트론 어닐 웨이퍼 및 그 제조 방법
US20040259321A1 (en) * 2003-06-19 2004-12-23 Mehran Aminzadeh Reducing processing induced stress
US6955718B2 (en) * 2003-07-08 2005-10-18 Memc Electronic Materials, Inc. Process for preparing a stabilized ideal oxygen precipitating silicon wafer
EP1909315A4 (en) * 2005-07-27 2008-11-26 Sumco Corp SILICON PLATE AND METHOD FOR PRODUCING SAME
US7485928B2 (en) * 2005-11-09 2009-02-03 Memc Electronic Materials, Inc. Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering
DE602007004173D1 (de) * 2006-12-01 2010-02-25 Siltronic Ag Silicium-Wafer und dessen Herstellungsmethode
US8236579B2 (en) * 2007-03-14 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and systems for lithography alignment
US20090004426A1 (en) * 2007-06-29 2009-01-01 Memc Electronic Materials, Inc. Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates
US20090004458A1 (en) * 2007-06-29 2009-01-01 Memc Electronic Materials, Inc. Diffusion Control in Heavily Doped Substrates
TWI442478B (zh) * 2008-03-05 2014-06-21 Sumco Corp 矽基板及其製造方法
JP5537802B2 (ja) * 2008-12-26 2014-07-02 ジルトロニック アクチエンゲゼルシャフト シリコンウエハの製造方法
FR2977974B1 (fr) 2011-07-13 2014-03-07 Soitec Silicon On Insulator Procede de mesure de defauts dans un substrat de silicium
WO2014078847A1 (en) * 2012-11-19 2014-05-22 Sunedison, Inc. Production of high precipitate density wafers by activation of inactive oxygen precipitate nuclei by heat treatment

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57167636A (en) * 1981-03-11 1982-10-15 Fujitsu Ltd Manufacture of semiconductor device
JPS5887833A (ja) * 1981-11-20 1983-05-25 Hitachi Ltd 半導体装置の製造方法

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US3615873A (en) 1969-06-03 1971-10-26 Sprague Electric Co Method of stabilizing mos devices
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CH38273A4 (de) 1973-01-11 1976-01-30 Lasag Sa Verfahren zur Verringerung der Bruchgefahr von unter hoher Materialbeanspruchung bearbeiteten Uhrlagersteinen aus metalloxydischen Kristallen
JPS583374B2 (ja) 1977-06-15 1983-01-21 超エル・エス・アイ技術研究組合 シリコン単結晶の処理方法
US4144099A (en) 1977-10-31 1979-03-13 International Business Machines Corporation High performance silicon wafer and fabrication process
JPS583375B2 (ja) 1979-01-19 1983-01-21 超エル・エス・アイ技術研究組合 シリコン単結晶ウエハ−の製造方法
FR2460479A1 (fr) 1979-06-29 1981-01-23 Ibm France Procede de caracterisation de la teneur en oxygene des barreaux de silicium tires selon la methode czochralski
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JPS57167636A (en) * 1981-03-11 1982-10-15 Fujitsu Ltd Manufacture of semiconductor device
JPS5887833A (ja) * 1981-11-20 1983-05-25 Hitachi Ltd 半導体装置の製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03185831A (ja) * 1989-12-15 1991-08-13 Komatsu Denshi Kinzoku Kk 半導体装置の製造方法
JPH05102167A (ja) * 1991-10-07 1993-04-23 Shin Etsu Handotai Co Ltd シリコンの熱処理方法
JPH0697179A (ja) * 1992-09-09 1994-04-08 Mitsubishi Materials Corp シリコンウェーハのｉｇ熱処理方法
JPWO2003009365A1 (ja) * 2001-07-10 2004-11-11 信越半導体株式会社 シリコンウェーハの製造方法、シリコンエピタキシャルウェーハの製造方法、および、シリコンエピタキシャルウェーハ
US7033962B2 (en) 2001-07-10 2006-04-25 Shin-Etsu Handotai Co., Ltd. Methods for manufacturing silicon wafer and silicone epitaxial wafer, and silicon epitaxial wafer
JP2004134439A (ja) * 2002-10-08 2004-04-30 Shin Etsu Handotai Co Ltd アニールウェーハおよびアニールウェーハの製造方法
US7311888B2 (en) 2002-10-08 2007-12-25 Shin-Etsu Handotai Co., Ltd. Annealed wafer and method for manufacturing the same
JP2006527493A (ja) * 2003-06-10 2006-11-30 エス．オー．アイ．テック、シリコン、オン、インシュレター、テクノロジーズ 改良された安定化アニール方法

Also Published As

Publication number Publication date
EP0090320B1 (en) 1987-04-01
DE3370663D1 (en) 1987-05-07
EP0090320A1 (en) 1983-10-05
JPH0319699B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-03-15
US4437922A (en) 1984-03-20

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