JPS58168278A - 薄膜トランジスタの製造方法 - Google Patents

薄膜トランジスタの製造方法

Info

Publication number
JPS58168278A
JPS58168278A JP57051992A JP5199282A JPS58168278A JP S58168278 A JPS58168278 A JP S58168278A JP 57051992 A JP57051992 A JP 57051992A JP 5199282 A JP5199282 A JP 5199282A JP S58168278 A JPS58168278 A JP S58168278A
Authority
JP
Japan
Prior art keywords
film
thin film
source
electrode
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57051992A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0454375B2 (enExample
Inventor
Yasuo Nakai
康雄 中井
Hiroshi Nozawa
野沢　博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57051992A priority Critical patent/JPS58168278A/ja
Publication of JPS58168278A publication Critical patent/JPS58168278A/ja
Publication of JPH0454375B2 publication Critical patent/JPH0454375B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Thin Film Transistor (AREA)
JP57051992A 1982-03-30 1982-03-30 薄膜トランジスタの製造方法 Granted JPS58168278A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57051992A JPS58168278A (ja) 1982-03-30 1982-03-30 薄膜トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57051992A JPS58168278A (ja) 1982-03-30 1982-03-30 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS58168278A true JPS58168278A (ja) 1983-10-04
JPH0454375B2 JPH0454375B2 (enExample) 1992-08-31

Family

ID=12902344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57051992A Granted JPS58168278A (ja) 1982-03-30 1982-03-30 薄膜トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS58168278A (enExample)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6053082A (ja) * 1983-09-02 1985-03-26 Seiko Epson Corp 薄膜トランジスタ
JPS60134474A (ja) * 1983-12-22 1985-07-17 Seiko Epson Corp Ｍｏｓ型アモルフアス半導体装置
JPS60213062A (ja) * 1984-04-09 1985-10-25 Hosiden Electronics Co Ltd 薄膜トランジスタの製造方法
JPS61171166A (ja) * 1985-01-24 1986-08-01 Sharp Corp 薄膜トランジスタおよびその製造法
JPS62205664A (ja) * 1986-03-06 1987-09-10 Matsushita Electric Ind Co Ltd 薄膜トランジスタの製造方法
JPS63158875A (ja) * 1986-12-22 1988-07-01 Nec Corp 薄膜トランジスタの製造方法
JPS63168052A (ja) * 1986-12-29 1988-07-12 Nec Corp 薄膜トランジスタとその製造方法
JPS6427271A (en) * 1987-07-22 1989-01-30 Nec Corp Manufacture of thin-film transistor
JPS6450567A (en) * 1987-08-21 1989-02-27 Nec Corp Thin film transistor and manufacture thereof
JPH04269837A (ja) * 1991-02-26 1992-09-25 Sharp Corp 薄膜トランジスタの製造方法
JPH0555254A (ja) * 1991-08-27 1993-03-05 Sharp Corp 薄膜トランジスタおよびその製造方法
JPH0637110A (ja) * 1992-02-28 1994-02-10 Matsushita Electric Ind Co Ltd 薄膜トランジスターの製造方法
JPH08248445A (ja) * 1995-12-22 1996-09-27 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型電界効果半導体装置
JP2001007342A (ja) * 1999-04-20 2001-01-12 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
EP0913860A3 (en) * 1997-10-29 2001-05-09 Xerox Corporation Method of manufacturing a thin film transistor
US6323069B1 (en) * 1992-03-25 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor using light irradiation to form impurity regions
US6331717B1 (en) 1993-08-12 2001-12-18 Semiconductor Energy Laboratory Co. Ltd. Insulated gate semiconductor device and process for fabricating the same
US6500703B1 (en) 1993-08-12 2002-12-31 Semicondcutor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
US6624450B1 (en) 1992-03-27 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821864A (ja) * 1981-07-31 1983-02-08 Seiko Epson Corp 薄膜半導体装置の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821864A (ja) * 1981-07-31 1983-02-08 Seiko Epson Corp 薄膜半導体装置の製造方法

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6053082A (ja) * 1983-09-02 1985-03-26 Seiko Epson Corp 薄膜トランジスタ
JPS60134474A (ja) * 1983-12-22 1985-07-17 Seiko Epson Corp Ｍｏｓ型アモルフアス半導体装置
JPS60213062A (ja) * 1984-04-09 1985-10-25 Hosiden Electronics Co Ltd 薄膜トランジスタの製造方法
JPS61171166A (ja) * 1985-01-24 1986-08-01 Sharp Corp 薄膜トランジスタおよびその製造法
JPS62205664A (ja) * 1986-03-06 1987-09-10 Matsushita Electric Ind Co Ltd 薄膜トランジスタの製造方法
JPS63158875A (ja) * 1986-12-22 1988-07-01 Nec Corp 薄膜トランジスタの製造方法
JPS63168052A (ja) * 1986-12-29 1988-07-12 Nec Corp 薄膜トランジスタとその製造方法
JPS6427271A (en) * 1987-07-22 1989-01-30 Nec Corp Manufacture of thin-film transistor
JPS6450567A (en) * 1987-08-21 1989-02-27 Nec Corp Thin film transistor and manufacture thereof
JPH04269837A (ja) * 1991-02-26 1992-09-25 Sharp Corp 薄膜トランジスタの製造方法
JPH0555254A (ja) * 1991-08-27 1993-03-05 Sharp Corp 薄膜トランジスタおよびその製造方法
JPH0637110A (ja) * 1992-02-28 1994-02-10 Matsushita Electric Ind Co Ltd 薄膜トランジスターの製造方法
US6323069B1 (en) * 1992-03-25 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor using light irradiation to form impurity regions
US6569724B2 (en) 1992-03-25 2003-05-27 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and method for forming the same
US6887746B2 (en) 1992-03-25 2005-05-03 Semiconductor Energy Lab Insulated gate field effect transistor and method for forming the same
US6624450B1 (en) 1992-03-27 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6331717B1 (en) 1993-08-12 2001-12-18 Semiconductor Energy Laboratory Co. Ltd. Insulated gate semiconductor device and process for fabricating the same
US6437366B1 (en) 1993-08-12 2002-08-20 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
US6500703B1 (en) 1993-08-12 2002-12-31 Semicondcutor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
US7381598B2 (en) 1993-08-12 2008-06-03 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
JPH08248445A (ja) * 1995-12-22 1996-09-27 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型電界効果半導体装置
EP0913860A3 (en) * 1997-10-29 2001-05-09 Xerox Corporation Method of manufacturing a thin film transistor
JP2001007342A (ja) * 1999-04-20 2001-01-12 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法

Also Published As

Publication number Publication date
JPH0454375B2 (enExample) 1992-08-31

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