JPS58168261A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58168261A
JPS58168261A JP5208882A JP5208882A JPS58168261A JP S58168261 A JPS58168261 A JP S58168261A JP 5208882 A JP5208882 A JP 5208882A JP 5208882 A JP5208882 A JP 5208882A JP S58168261 A JPS58168261 A JP S58168261A
Authority
JP
Japan
Prior art keywords
etching
layer
film
forming
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5208882A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6310899B2 (enExample
Inventor
Hiroshi Goto
広志 後藤
Chuichi Takada
高田　忠一
Ryoji Abe
良司 阿部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5208882A priority Critical patent/JPS58168261A/ja
Publication of JPS58168261A publication Critical patent/JPS58168261A/ja
Publication of JPS6310899B2 publication Critical patent/JPS6310899B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
JP5208882A 1982-03-30 1982-03-30 半導体装置の製造方法 Granted JPS58168261A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5208882A JPS58168261A (ja) 1982-03-30 1982-03-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5208882A JPS58168261A (ja) 1982-03-30 1982-03-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58168261A true JPS58168261A (ja) 1983-10-04
JPS6310899B2 JPS6310899B2 (enExample) 1988-03-10

Family

ID=12905068

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5208882A Granted JPS58168261A (ja) 1982-03-30 1982-03-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58168261A (enExample)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60147133A (ja) * 1983-12-29 1985-08-03 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 半導体基板内に溝を形成する方法
JPS6123338A (ja) * 1984-07-11 1986-01-31 Sony Corp 半導体装置の製造方法
US4693781A (en) * 1986-06-26 1987-09-15 Motorola, Inc. Trench formation process
US4808550A (en) * 1985-09-17 1989-02-28 Fujitsu Limited Method of producing isolation groove structure
JPH0222818A (ja) * 1988-07-11 1990-01-25 Nec Corp 半導体装置の製造方法
US4985368A (en) * 1987-03-23 1991-01-15 Mitsubishi Denki Kabushiki Kaisha Method for making semiconductor device with no stress generated at the trench corner portion
JPH0488516U (enExample) * 1990-12-14 1992-07-31
JPH0665215B2 (ja) * 1983-12-22 1994-08-22 アドバンスト・マイクロ・ディバイシズ・インコ−ポレ−テッド デバイスの製造における無転移スロット分離のための方法
JPH0770511B2 (ja) * 1983-12-22 1995-07-31 アドバンスト・マイクロ・ディバイシズ・インコ−ポレ−テッド 二酸化珪素への改良された選択性を有する単結晶シリコンのためのプラズマエッチングプロセス
US6902867B2 (en) 2002-10-02 2005-06-07 Lexmark International, Inc. Ink jet printheads and methods therefor
US6984015B2 (en) 2003-08-12 2006-01-10 Lexmark International, Inc. Ink jet printheads and method therefor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56103446A (en) * 1980-01-22 1981-08-18 Fujitsu Ltd Semiconductor device
JPS589333A (ja) * 1981-07-08 1983-01-19 Hitachi Ltd 半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56103446A (en) * 1980-01-22 1981-08-18 Fujitsu Ltd Semiconductor device
JPS589333A (ja) * 1981-07-08 1983-01-19 Hitachi Ltd 半導体装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0665215B2 (ja) * 1983-12-22 1994-08-22 アドバンスト・マイクロ・ディバイシズ・インコ−ポレ−テッド デバイスの製造における無転移スロット分離のための方法
JPH0770511B2 (ja) * 1983-12-22 1995-07-31 アドバンスト・マイクロ・ディバイシズ・インコ−ポレ−テッド 二酸化珪素への改良された選択性を有する単結晶シリコンのためのプラズマエッチングプロセス
JPS60147133A (ja) * 1983-12-29 1985-08-03 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 半導体基板内に溝を形成する方法
JPS6123338A (ja) * 1984-07-11 1986-01-31 Sony Corp 半導体装置の製造方法
US4808550A (en) * 1985-09-17 1989-02-28 Fujitsu Limited Method of producing isolation groove structure
US4693781A (en) * 1986-06-26 1987-09-15 Motorola, Inc. Trench formation process
US4985368A (en) * 1987-03-23 1991-01-15 Mitsubishi Denki Kabushiki Kaisha Method for making semiconductor device with no stress generated at the trench corner portion
JPH0222818A (ja) * 1988-07-11 1990-01-25 Nec Corp 半導体装置の製造方法
JPH0488516U (enExample) * 1990-12-14 1992-07-31
US6902867B2 (en) 2002-10-02 2005-06-07 Lexmark International, Inc. Ink jet printheads and methods therefor
US6984015B2 (en) 2003-08-12 2006-01-10 Lexmark International, Inc. Ink jet printheads and method therefor

Also Published As

Publication number Publication date
JPS6310899B2 (enExample) 1988-03-10

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