JPS58153332A - ドライエツチング装置 - Google Patents

ドライエツチング装置

Info

Publication number
JPS58153332A
JPS58153332A JP3766582A JP3766582A JPS58153332A JP S58153332 A JPS58153332 A JP S58153332A JP 3766582 A JP3766582 A JP 3766582A JP 3766582 A JP3766582 A JP 3766582A JP S58153332 A JPS58153332 A JP S58153332A
Authority
JP
Japan
Prior art keywords
etching
chamber
temperature
container
upper electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3766582A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0442821B2 (enrdf_load_stackoverflow
Inventor
Masahiro Yoneda
昌弘 米田
Tomoji Morita
森田　知二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3766582A priority Critical patent/JPS58153332A/ja
Publication of JPS58153332A publication Critical patent/JPS58153332A/ja
Publication of JPH0442821B2 publication Critical patent/JPH0442821B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
JP3766582A 1982-03-08 1982-03-08 ドライエツチング装置 Granted JPS58153332A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3766582A JPS58153332A (ja) 1982-03-08 1982-03-08 ドライエツチング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3766582A JPS58153332A (ja) 1982-03-08 1982-03-08 ドライエツチング装置

Publications (2)

Publication Number Publication Date
JPS58153332A true JPS58153332A (ja) 1983-09-12
JPH0442821B2 JPH0442821B2 (enrdf_load_stackoverflow) 1992-07-14

Family

ID=12503922

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3766582A Granted JPS58153332A (ja) 1982-03-08 1982-03-08 ドライエツチング装置

Country Status (1)

Country Link
JP (1) JPS58153332A (enrdf_load_stackoverflow)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60140723A (ja) * 1983-12-28 1985-07-25 Oki Electric Ind Co Ltd ドライエッチング方法
JPS60154529A (ja) * 1984-01-23 1985-08-14 Mitsubishi Electric Corp ドライエツチング装置
JPS6163030A (ja) * 1984-08-20 1986-04-01 Kokusai Electric Co Ltd プラズマエッチング装置の電極温度制御方法
JPS61260637A (ja) * 1985-05-15 1986-11-18 Mitsubishi Electric Corp ドライエツチング装置
JPS6230329A (ja) * 1985-07-31 1987-02-09 Toshiba Corp ドライエツチング装置
JPS6310522A (ja) * 1986-07-02 1988-01-18 Sony Corp ドライエツチング方法
US4938839A (en) * 1986-02-14 1990-07-03 Fujitsu Limited Method of removing photoresist on a semiconductor wafer
US5045652A (en) * 1988-06-02 1991-09-03 Kabushiki Kaisha Toshiba Disconnector of gas insulated switchgear
JPH04180222A (ja) * 1990-11-15 1992-06-26 Anelva Corp エッチング方法および装置
EP0732729A3 (en) * 1995-03-16 1997-03-26 Hitachi Ltd Plasma processing device and method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3367303A (en) * 1963-05-29 1968-02-06 Monsanto Co Chemical equipment
JPS53123669A (en) * 1977-04-05 1978-10-28 Fujitsu Ltd Wafer holding method
JPS6056431A (ja) * 1983-09-07 1985-04-02 Tokyo Electric Power Co Inc:The 硬銅線単線又は撚線の残留応力除去方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3367303A (en) * 1963-05-29 1968-02-06 Monsanto Co Chemical equipment
JPS53123669A (en) * 1977-04-05 1978-10-28 Fujitsu Ltd Wafer holding method
JPS6056431A (ja) * 1983-09-07 1985-04-02 Tokyo Electric Power Co Inc:The 硬銅線単線又は撚線の残留応力除去方法

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60140723A (ja) * 1983-12-28 1985-07-25 Oki Electric Ind Co Ltd ドライエッチング方法
JPS60154529A (ja) * 1984-01-23 1985-08-14 Mitsubishi Electric Corp ドライエツチング装置
JPS6163030A (ja) * 1984-08-20 1986-04-01 Kokusai Electric Co Ltd プラズマエッチング装置の電極温度制御方法
JPS61260637A (ja) * 1985-05-15 1986-11-18 Mitsubishi Electric Corp ドライエツチング装置
JPS6230329A (ja) * 1985-07-31 1987-02-09 Toshiba Corp ドライエツチング装置
US4938839A (en) * 1986-02-14 1990-07-03 Fujitsu Limited Method of removing photoresist on a semiconductor wafer
JPS6310522A (ja) * 1986-07-02 1988-01-18 Sony Corp ドライエツチング方法
US5045652A (en) * 1988-06-02 1991-09-03 Kabushiki Kaisha Toshiba Disconnector of gas insulated switchgear
JPH04180222A (ja) * 1990-11-15 1992-06-26 Anelva Corp エッチング方法および装置
EP0732729A3 (en) * 1995-03-16 1997-03-26 Hitachi Ltd Plasma processing device and method
EP0881662A1 (en) * 1995-03-16 1998-12-02 Hitachi, Ltd. Plasma processing apparatus and plasma processing method
US6171438B1 (en) 1995-03-16 2001-01-09 Hitachi, Ltd. Plasma processing apparatus and plasma processing method
US6815365B2 (en) 1995-03-16 2004-11-09 Hitachi, Ltd. Plasma etching apparatus and plasma etching method
US7208422B2 (en) 1995-03-16 2007-04-24 Hitachi, Ltd. Plasma processing method
US7565879B2 (en) 1995-03-16 2009-07-28 Hitachi, Ltd Plasma processing apparatus

Also Published As

Publication number Publication date
JPH0442821B2 (enrdf_load_stackoverflow) 1992-07-14

Similar Documents

Publication Publication Date Title
US5904872A (en) Heating device, method of manufacturing the same, and processing apparatus using the same
US3615956A (en) Gas plasma vapor etching process
JP3242166B2 (ja) エッチング装置
JP2766433B2 (ja) 半導体気相成長装置
JPS58153332A (ja) ドライエツチング装置
JP3338884B2 (ja) 半導体処理装置
JPS591671A (ja) プラズマｃｖｄ装置
JPS6056431B2 (ja) プラズマエツチング装置
JPH05121333A (ja) プラズマ処理装置
KR980005399A (ko) 반도체 디바이스 제조장치, 제조장치의 공정 조건 조절방법 및 이를 이용한 커패시터 제조방법
JP2007531306A (ja) 分圧を使用して化学的酸化物除去プロセスを調整するための方法およびシステム
JP2001257253A (ja) ウエハ処理装置およびウエハ製造方法
JP3167493B2 (ja) 圧力制御装置
US4766007A (en) Process for forming deposited film
JP3045259B2 (ja) プラズマ装置
JPH1054680A (ja) ヒートパイプへの作動液封入方法及び作動液封入装置
JPH04311573A (ja) 光ｃｖｄ装置
JPS6136931A (ja) ウエ−ハの温度制御方法
US3123957A (en) Apparatus for processing a plurality of articles or materials
JP2913666B2 (ja) 試料保持装置
JP2876994B2 (ja) 短時間アニール装置
JPS5656643A (en) Treating device for semiconductor substrate
JP2001148350A (ja) 縦型加熱装置
JPS594849B2 (ja) マイクロ波プラズマ処理装置
JPH05234949A (ja) プラズマ処理装置