JPS58137271A - 光半導体素子用レンズ、光半導体素子用レンズの製造方法、及び光半導体素子 - Google Patents

光半導体素子用レンズ、光半導体素子用レンズの製造方法、及び光半導体素子

Info

Publication number
JPS58137271A
JPS58137271A JP57018956A JP1895682A JPS58137271A JP S58137271 A JPS58137271 A JP S58137271A JP 57018956 A JP57018956 A JP 57018956A JP 1895682 A JP1895682 A JP 1895682A JP S58137271 A JPS58137271 A JP S58137271A
Authority
JP
Japan
Prior art keywords
light
emitting diode
lens
ballast
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57018956A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0512872B2 (enExample
Inventor
Hideto Furuyama
英人 古山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57018956A priority Critical patent/JPS58137271A/ja
Publication of JPS58137271A publication Critical patent/JPS58137271A/ja
Publication of JPH0512872B2 publication Critical patent/JPH0512872B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies

Landscapes

  • Led Devices (AREA)
JP57018956A 1982-02-10 1982-02-10 光半導体素子用レンズ、光半導体素子用レンズの製造方法、及び光半導体素子 Granted JPS58137271A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57018956A JPS58137271A (ja) 1982-02-10 1982-02-10 光半導体素子用レンズ、光半導体素子用レンズの製造方法、及び光半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57018956A JPS58137271A (ja) 1982-02-10 1982-02-10 光半導体素子用レンズ、光半導体素子用レンズの製造方法、及び光半導体素子

Publications (2)

Publication Number Publication Date
JPS58137271A true JPS58137271A (ja) 1983-08-15
JPH0512872B2 JPH0512872B2 (enExample) 1993-02-19

Family

ID=11986094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57018956A Granted JPS58137271A (ja) 1982-02-10 1982-02-10 光半導体素子用レンズ、光半導体素子用レンズの製造方法、及び光半導体素子

Country Status (1)

Country Link
JP (1) JPS58137271A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002007229A1 (en) * 2000-07-19 2002-01-24 Qinetiq Limited Light emitting diode arrangements
JP2003078167A (ja) * 2001-08-31 2003-03-14 Abel Systems Inc 発光ダイオードとその製造方法
JP2006049829A (ja) * 2004-06-29 2006-02-16 Fuji Xerox Co Ltd 表面発光型半導体レーザおよびその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643783A (en) * 1979-09-18 1981-04-22 Toshiba Corp Light emitting diode for optical communication

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643783A (en) * 1979-09-18 1981-04-22 Toshiba Corp Light emitting diode for optical communication

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002007229A1 (en) * 2000-07-19 2002-01-24 Qinetiq Limited Light emitting diode arrangements
JP2003078167A (ja) * 2001-08-31 2003-03-14 Abel Systems Inc 発光ダイオードとその製造方法
JP2006049829A (ja) * 2004-06-29 2006-02-16 Fuji Xerox Co Ltd 表面発光型半導体レーザおよびその製造方法

Also Published As

Publication number Publication date
JPH0512872B2 (enExample) 1993-02-19

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