JPS58135668A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS58135668A
JPS58135668A JP57018668A JP1866882A JPS58135668A JP S58135668 A JPS58135668 A JP S58135668A JP 57018668 A JP57018668 A JP 57018668A JP 1866882 A JP1866882 A JP 1866882A JP S58135668 A JPS58135668 A JP S58135668A
Authority
JP
Japan
Prior art keywords
electrode
layer
semiconductor device
melting point
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57018668A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0226790B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Naoki Yokoyama
直樹 横山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57018668A priority Critical patent/JPS58135668A/ja
Publication of JPS58135668A publication Critical patent/JPS58135668A/ja
Publication of JPH0226790B2 publication Critical patent/JPH0226790B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP57018668A 1982-02-08 1982-02-08 半導体装置 Granted JPS58135668A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57018668A JPS58135668A (ja) 1982-02-08 1982-02-08 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57018668A JPS58135668A (ja) 1982-02-08 1982-02-08 半導体装置

Publications (2)

Publication Number Publication Date
JPS58135668A true JPS58135668A (ja) 1983-08-12
JPH0226790B2 JPH0226790B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-06-12

Family

ID=11977980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57018668A Granted JPS58135668A (ja) 1982-02-08 1982-02-08 半導体装置

Country Status (1)

Country Link
JP (1) JPS58135668A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5121174A (en) * 1987-10-23 1992-06-09 Vitesse Semiconductor Corporation Gate-to-ohmic metal contact scheme for III-V devices
US5422307A (en) * 1992-03-03 1995-06-06 Sumitomo Electric Industries, Ltd. Method of making an ohmic electrode using a TiW layer and an Au layer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5021225A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-06-29 1975-03-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5021225A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-06-29 1975-03-06

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5121174A (en) * 1987-10-23 1992-06-09 Vitesse Semiconductor Corporation Gate-to-ohmic metal contact scheme for III-V devices
US5422307A (en) * 1992-03-03 1995-06-06 Sumitomo Electric Industries, Ltd. Method of making an ohmic electrode using a TiW layer and an Au layer

Also Published As

Publication number Publication date
JPH0226790B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-06-12

Similar Documents

Publication Publication Date Title
US4312113A (en) Method of making field-effect transistors with micron and submicron gate lengths
JPH0387066A (ja) 化合物半導体用電極
JPS58135668A (ja) 半導体装置
US4312112A (en) Method of making field-effect transistors with micron and submicron gate lengths
JPS59188978A (ja) シヨツトキゲ−ト型ｆｅｔの製造方法
JPS59500542A (ja) Ｎ型ＧａＡｓ用のオ−ム接触装置
JPH0359580B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS5898963A (ja) 半導体装置
JP2569032B2 (ja) 半導体装置
JPS61214481A (ja) シヨツトキ障壁ゲ−ト電界効果トランジスタ
JPS6016463A (ja) オ−ム性電極
JPS63202951A (ja) 化合物半導体装置
JPS60123067A (ja) 半導体装置およびその製造方法
JPS61174671A (ja) シヨツトキ接合型半導体装置及びその製法
JPH0472385B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0416952B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6217391B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6231487B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH01125985A (ja) 半導体装置
JPH04186617A (ja) オーミックコンタクト電極
JPH03270017A (ja) 半導体装置の製造方法
JPH028457B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS60245220A (ja) 砒化ガリウムへのオ−ム性電極の形成方法
JPS60165763A (ja) 光−電子素子集積回路装置の製造方法
JPS5975673A (ja) 半導体装置の製造方法