JPS58127376A - Ｇｔｏサイリスタ - Google Patents

Ｇｔｏサイリスタ

Info

Publication number
JPS58127376A
JPS58127376A JP57009689A JP968982A JPS58127376A JP S58127376 A JPS58127376 A JP S58127376A JP 57009689 A JP57009689 A JP 57009689A JP 968982 A JP968982 A JP 968982A JP S58127376 A JPS58127376 A JP S58127376A
Authority
JP
Japan
Prior art keywords
transistor
diode
thyristor
electrode
gto thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57009689A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0547992B2 (enExample
Inventor
Osamu Hashimoto
理 橋本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Fuji Electric Corporate Research and Development Ltd
Fuji Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd, Fuji Electric Corporate Research and Development Ltd, Fuji Electric Manufacturing Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP57009689A priority Critical patent/JPS58127376A/ja
Publication of JPS58127376A publication Critical patent/JPS58127376A/ja
Publication of JPH0547992B2 publication Critical patent/JPH0547992B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for DC voltages or currents
    • H03K17/732—Measures for enabling turn-off

Landscapes

  • Thyristors (AREA)
  • Thyristor Switches And Gates (AREA)
JP57009689A 1982-01-25 1982-01-25 Ｇｔｏサイリスタ Granted JPS58127376A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57009689A JPS58127376A (ja) 1982-01-25 1982-01-25 Ｇｔｏサイリスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57009689A JPS58127376A (ja) 1982-01-25 1982-01-25 Ｇｔｏサイリスタ

Publications (2)

Publication Number Publication Date
JPS58127376A true JPS58127376A (ja) 1983-07-29
JPH0547992B2 JPH0547992B2 (enExample) 1993-07-20

Family

ID=11727179

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57009689A Granted JPS58127376A (ja) 1982-01-25 1982-01-25 Ｇｔｏサイリスタ

Country Status (1)

Country Link
JP (1) JPS58127376A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60163759U (ja) * 1984-04-05 1985-10-30 株式会社明電舎 ゲ−トタ−ンオフサイリスタ
JPS6130259U (ja) * 1984-07-27 1986-02-24 株式会社明電舎 圧接形半導体装置
JPS6130258U (ja) * 1984-07-27 1986-02-24 株式会社明電舎 圧接形半導体装置
JPS6130257U (ja) * 1984-07-27 1986-02-24 株式会社明電舎 圧接形半導体装置
JPS63122270A (ja) * 1986-11-12 1988-05-26 Toshiba Components Kk サイリスタ
JPS63209174A (ja) * 1987-02-26 1988-08-30 Toshiba Corp 絶縁ゲ−ト型サイリスタ

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60163759U (ja) * 1984-04-05 1985-10-30 株式会社明電舎 ゲ−トタ−ンオフサイリスタ
JPS6130259U (ja) * 1984-07-27 1986-02-24 株式会社明電舎 圧接形半導体装置
JPS6130258U (ja) * 1984-07-27 1986-02-24 株式会社明電舎 圧接形半導体装置
JPS6130257U (ja) * 1984-07-27 1986-02-24 株式会社明電舎 圧接形半導体装置
JPS63122270A (ja) * 1986-11-12 1988-05-26 Toshiba Components Kk サイリスタ
JPS63209174A (ja) * 1987-02-26 1988-08-30 Toshiba Corp 絶縁ゲ−ト型サイリスタ

Also Published As

Publication number Publication date
JPH0547992B2 (enExample) 1993-07-20

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