JPS5812732B2 - 半導体装置の製法 - Google Patents

半導体装置の製法

Info

Publication number
JPS5812732B2
JPS5812732B2 JP53002850A JP285078A JPS5812732B2 JP S5812732 B2 JPS5812732 B2 JP S5812732B2 JP 53002850 A JP53002850 A JP 53002850A JP 285078 A JP285078 A JP 285078A JP S5812732 B2 JPS5812732 B2 JP S5812732B2
Authority
JP
Japan
Prior art keywords
layer
oxidation
polyoxide
mask
polysilicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53002850A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5390776A (en
Inventor
テリー・ジヨージ・アタナス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CTU of Delaware Inc
Original Assignee
Mostek Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mostek Corp filed Critical Mostek Corp
Publication of JPS5390776A publication Critical patent/JPS5390776A/ja
Publication of JPS5812732B2 publication Critical patent/JPS5812732B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D64/0135—
    • H10P14/61—
    • H10P14/6308—
    • H10P14/6309—
    • H10P14/6322—
    • H10P14/6502—
    • H10P32/302—
    • H10P76/40—

Landscapes

  • Formation Of Insulating Films (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Local Oxidation Of Silicon (AREA)
JP53002850A 1977-01-17 1978-01-17 半導体装置の製法 Expired JPS5812732B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75980377A 1977-01-17 1977-01-17

Publications (2)

Publication Number Publication Date
JPS5390776A JPS5390776A (en) 1978-08-09
JPS5812732B2 true JPS5812732B2 (ja) 1983-03-10

Family

ID=25057013

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53002850A Expired JPS5812732B2 (ja) 1977-01-17 1978-01-17 半導体装置の製法

Country Status (5)

Country Link
JP (1) JPS5812732B2 (OSRAM)
DE (1) DE2801680A1 (OSRAM)
FR (1) FR2377703A1 (OSRAM)
GB (1) GB1593694A (OSRAM)
IT (1) IT1089298B (OSRAM)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4268951A (en) * 1978-11-13 1981-05-26 Rockwell International Corporation Submicron semiconductor devices
JPS5941870A (ja) * 1982-08-25 1984-03-08 Toshiba Corp 半導体装置の製造方法
JPS5955071A (ja) * 1982-09-24 1984-03-29 Hitachi Micro Comput Eng Ltd 不揮発性半導体装置
GB2131407B (en) * 1982-11-12 1987-02-04 Rca Corp Method of formation of silicon dioxide layer
JPS59184547A (ja) * 1983-04-04 1984-10-19 Agency Of Ind Science & Technol 半導体装置及びその製造方法
JPS6066866A (ja) * 1983-09-24 1985-04-17 Sharp Corp 炭化珪素ｍｏｓ構造の製造方法
CN112002648A (zh) * 2020-07-14 2020-11-27 全球能源互联网研究院有限公司 一种碳化硅功率器件的制备方法及碳化硅功率器件

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3966501A (en) * 1973-03-23 1976-06-29 Mitsubishi Denki Kabushiki Kaisha Process of producing semiconductor devices
JPS5536185B2 (OSRAM) * 1973-05-08 1980-09-19
US3911168A (en) * 1973-06-01 1975-10-07 Fairchild Camera Instr Co Method for forming a continuous layer of silicon dioxide over a substrate
US3874920A (en) * 1973-06-28 1975-04-01 Ibm Boron silicide method for making thermally oxidized boron doped poly-crystalline silicon having minimum resistivity
US3899373A (en) * 1974-05-20 1975-08-12 Ibm Method for forming a field effect device

Also Published As

Publication number Publication date
GB1593694A (en) 1981-07-22
DE2801680A1 (de) 1978-07-20
FR2377703B1 (OSRAM) 1985-04-12
IT1089298B (it) 1985-06-18
FR2377703A1 (fr) 1978-08-11
JPS5390776A (en) 1978-08-09

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