FR2377703A1 - Procede de fabrication de dispositif semi-conducteur - Google Patents

Procede de fabrication de dispositif semi-conducteur

Info

Publication number
FR2377703A1
FR2377703A1 FR7801128A FR7801128A FR2377703A1 FR 2377703 A1 FR2377703 A1 FR 2377703A1 FR 7801128 A FR7801128 A FR 7801128A FR 7801128 A FR7801128 A FR 7801128A FR 2377703 A1 FR2377703 A1 FR 2377703A1
Authority
FR
France
Prior art keywords
semiconductor device
manufacturing process
device manufacturing
silicon oxide
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7801128A
Other languages
English (en)
French (fr)
Other versions
FR2377703B1 (OSRAM
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CTU of Delaware Inc
Original Assignee
Mostek Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mostek Corp filed Critical Mostek Corp
Publication of FR2377703A1 publication Critical patent/FR2377703A1/fr
Application granted granted Critical
Publication of FR2377703B1 publication Critical patent/FR2377703B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/0135—Making the insulator by deposition of a layer, e.g. metal, metal compound or polysilicon, followed by transformation thereof into the insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/30—Diffusion for doping of conductive or resistive layers
    • H10P32/302—Doping polycrystalline silicon or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials

Landscapes

  • Formation Of Insulating Films (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Local Oxidation Of Silicon (AREA)
FR7801128A 1977-01-17 1978-01-16 Procede de fabrication de dispositif semi-conducteur Granted FR2377703A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75980377A 1977-01-17 1977-01-17

Publications (2)

Publication Number Publication Date
FR2377703A1 true FR2377703A1 (fr) 1978-08-11
FR2377703B1 FR2377703B1 (OSRAM) 1985-04-12

Family

ID=25057013

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7801128A Granted FR2377703A1 (fr) 1977-01-17 1978-01-16 Procede de fabrication de dispositif semi-conducteur

Country Status (5)

Country Link
JP (1) JPS5812732B2 (OSRAM)
DE (1) DE2801680A1 (OSRAM)
FR (1) FR2377703A1 (OSRAM)
GB (1) GB1593694A (OSRAM)
IT (1) IT1089298B (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2536208A1 (fr) * 1982-11-12 1984-05-18 Rca Corp Procede de formation de bioxyde de silicium et dispositif a semi-conducteurs avec une couche de bioxyde de silicium
EP0106458A3 (en) * 1982-08-25 1986-07-16 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device including a mis field effect transistor

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4268951A (en) * 1978-11-13 1981-05-26 Rockwell International Corporation Submicron semiconductor devices
JPS5955071A (ja) * 1982-09-24 1984-03-29 Hitachi Micro Comput Eng Ltd 不揮発性半導体装置
JPS59184547A (ja) * 1983-04-04 1984-10-19 Agency Of Ind Science & Technol 半導体装置及びその製造方法
JPS6066866A (ja) * 1983-09-24 1985-04-17 Sharp Corp 炭化珪素ｍｏｓ構造の製造方法
CN112002648A (zh) * 2020-07-14 2020-11-27 全球能源互联网研究院有限公司 一种碳化硅功率器件的制备方法及碳化硅功率器件

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2234921A1 (OSRAM) * 1973-06-28 1975-01-24 Ibm
US3899373A (en) * 1974-05-20 1975-08-12 Ibm Method for forming a field effect device
US3911168A (en) * 1973-06-01 1975-10-07 Fairchild Camera Instr Co Method for forming a continuous layer of silicon dioxide over a substrate
US3966501A (en) * 1973-03-23 1976-06-29 Mitsubishi Denki Kabushiki Kaisha Process of producing semiconductor devices

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5536185B2 (OSRAM) * 1973-05-08 1980-09-19

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3966501A (en) * 1973-03-23 1976-06-29 Mitsubishi Denki Kabushiki Kaisha Process of producing semiconductor devices
US3911168A (en) * 1973-06-01 1975-10-07 Fairchild Camera Instr Co Method for forming a continuous layer of silicon dioxide over a substrate
FR2234921A1 (OSRAM) * 1973-06-28 1975-01-24 Ibm
US3899373A (en) * 1974-05-20 1975-08-12 Ibm Method for forming a field effect device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/75 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0106458A3 (en) * 1982-08-25 1986-07-16 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device including a mis field effect transistor
FR2536208A1 (fr) * 1982-11-12 1984-05-18 Rca Corp Procede de formation de bioxyde de silicium et dispositif a semi-conducteurs avec une couche de bioxyde de silicium

Also Published As

Publication number Publication date
JPS5390776A (en) 1978-08-09
FR2377703B1 (OSRAM) 1985-04-12
IT1089298B (it) 1985-06-18
JPS5812732B2 (ja) 1983-03-10
GB1593694A (en) 1981-07-22
DE2801680A1 (de) 1978-07-20

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Legal Events

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CD Change of name or company name
TP Transmission of property