JPS58125976A - 固体撮像素子 - Google Patents

固体撮像素子

Info

Publication number
JPS58125976A
JPS58125976A JP57008449A JP844982A JPS58125976A JP S58125976 A JPS58125976 A JP S58125976A JP 57008449 A JP57008449 A JP 57008449A JP 844982 A JP844982 A JP 844982A JP S58125976 A JPS58125976 A JP S58125976A
Authority
JP
Japan
Prior art keywords
substrate
layer
semiconductor layer
solid
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57008449A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0424872B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Hidetsugu Oda
織田　英嗣
Shinichi Teranishi
信一 寺西
Yasuo Ishihara
石原　保雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57008449A priority Critical patent/JPS58125976A/ja
Publication of JPS58125976A publication Critical patent/JPS58125976A/ja
Publication of JPH0424872B2 publication Critical patent/JPH0424872B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP57008449A 1982-01-22 1982-01-22 固体撮像素子 Granted JPS58125976A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57008449A JPS58125976A (ja) 1982-01-22 1982-01-22 固体撮像素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57008449A JPS58125976A (ja) 1982-01-22 1982-01-22 固体撮像素子

Publications (2)

Publication Number Publication Date
JPS58125976A true JPS58125976A (ja) 1983-07-27
JPH0424872B2 JPH0424872B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-04-28

Family

ID=11693429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57008449A Granted JPS58125976A (ja) 1982-01-22 1982-01-22 固体撮像素子

Country Status (1)

Country Link
JP (1) JPS58125976A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62131567A (ja) * 1985-12-03 1987-06-13 Matsushita Electronics Corp 固体撮像装置
JPS62131566A (ja) * 1985-12-03 1987-06-13 Matsushita Electronics Corp 固体撮像装置
JPH0240956A (ja) * 1988-07-30 1990-02-09 Sony Corp 固体撮像装置及びその駆動方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5481094A (en) * 1977-11-25 1979-06-28 Hewlett Packard Yokogawa Semiconductor photodetector
JPS5495116A (en) * 1978-01-13 1979-07-27 Toshiba Corp Solid image pickup unit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5481094A (en) * 1977-11-25 1979-06-28 Hewlett Packard Yokogawa Semiconductor photodetector
JPS5495116A (en) * 1978-01-13 1979-07-27 Toshiba Corp Solid image pickup unit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62131567A (ja) * 1985-12-03 1987-06-13 Matsushita Electronics Corp 固体撮像装置
JPS62131566A (ja) * 1985-12-03 1987-06-13 Matsushita Electronics Corp 固体撮像装置
JPH0240956A (ja) * 1988-07-30 1990-02-09 Sony Corp 固体撮像装置及びその駆動方法

Also Published As

Publication number Publication date
JPH0424872B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-04-28

Similar Documents

Publication Publication Date Title
US7728277B2 (en) PMOS pixel structure with low cross talk for active pixel image sensors
EP0738010B1 (en) Active pixel sensor integrated with a pinned photodiode
JPS62124771A (ja) 固体撮像装置
JPH0878653A (ja) 増幅型光電変換素子、それを用いた増幅型固体撮像装置、及び増幅型光電変換素子の製造方法
JPH0318793B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS58138187A (ja) 固体イメ−ジセンサ
CN102104051B (zh) 固体摄像装置及其控制方法
JPH0424870B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS58125976A (ja) 固体撮像素子
JP2964571B2 (ja) 固体撮像素子
JP2901649B2 (ja) 半導体装置及びそれを用いたカメラ
JPH0135546B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6223156A (ja) 固体撮像装置およびその製造方法
JPH0424871B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0421351B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH02119266A (ja) 縦形オーバフロードレイン構造の固体撮像装置
JPS60244068A (ja) 埋込みチヤネル電荷結合素子
JPS58142682A (ja) 固体撮像素子
JPH0774336A (ja) 固体撮像素子
JP2594923B2 (ja) 固体撮像素子
JPS5917585B2 (ja) 固体撮像装置
JPH0395976A (ja) 光電変換素子
JPH0316263A (ja) 固体撮像素子
JPS6273663A (ja) 固体撮像装置およびその駆動方法
JPH03135069A (ja) 固体撮像素子