JPS5812376A - 赤外線検知素子の製造方法 - Google Patents

赤外線検知素子の製造方法

Info

Publication number
JPS5812376A
JPS5812376A JP56094466A JP9446681A JPS5812376A JP S5812376 A JPS5812376 A JP S5812376A JP 56094466 A JP56094466 A JP 56094466A JP 9446681 A JP9446681 A JP 9446681A JP S5812376 A JPS5812376 A JP S5812376A
Authority
JP
Japan
Prior art keywords
light receiving
infrared sensing
manufacture
manufacturing
conductive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56094466A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6233755B2 (enrdf_load_stackoverflow
Inventor
Takaaki Onoe
尾上　高明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56094466A priority Critical patent/JPS5812376A/ja
Publication of JPS5812376A publication Critical patent/JPS5812376A/ja
Publication of JPS6233755B2 publication Critical patent/JPS6233755B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors

Landscapes

  • Radiation Pyrometers (AREA)
  • Light Receiving Elements (AREA)
JP56094466A 1981-06-17 1981-06-17 赤外線検知素子の製造方法 Granted JPS5812376A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56094466A JPS5812376A (ja) 1981-06-17 1981-06-17 赤外線検知素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56094466A JPS5812376A (ja) 1981-06-17 1981-06-17 赤外線検知素子の製造方法

Publications (2)

Publication Number Publication Date
JPS5812376A true JPS5812376A (ja) 1983-01-24
JPS6233755B2 JPS6233755B2 (enrdf_load_stackoverflow) 1987-07-22

Family

ID=14111052

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56094466A Granted JPS5812376A (ja) 1981-06-17 1981-06-17 赤外線検知素子の製造方法

Country Status (1)

Country Link
JP (1) JPS5812376A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62179773A (ja) * 1986-02-04 1987-08-06 Nec Corp 光伝導型赤外線検出器及びその製造方法
KR20030056676A (ko) * 2001-12-28 2003-07-04 주식회사 케이이씨 적외선 감지기의 구조 및 그 제조방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62179773A (ja) * 1986-02-04 1987-08-06 Nec Corp 光伝導型赤外線検出器及びその製造方法
KR20030056676A (ko) * 2001-12-28 2003-07-04 주식회사 케이이씨 적외선 감지기의 구조 및 그 제조방법

Also Published As

Publication number Publication date
JPS6233755B2 (enrdf_load_stackoverflow) 1987-07-22

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