JPS5812376A - Manufacture of infrared ray detecting element - Google Patents
Manufacture of infrared ray detecting elementInfo
- Publication number
- JPS5812376A JPS5812376A JP56094466A JP9446681A JPS5812376A JP S5812376 A JPS5812376 A JP S5812376A JP 56094466 A JP56094466 A JP 56094466A JP 9446681 A JP9446681 A JP 9446681A JP S5812376 A JPS5812376 A JP S5812376A
- Authority
- JP
- Japan
- Prior art keywords
- chip
- conductive metal
- metal film
- infrared rays
- parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 229910000679 solder Inorganic materials 0.000 claims abstract description 6
- 150000001875 compounds Chemical class 0.000 claims abstract description 4
- 239000004065 semiconductor Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 abstract description 7
- 238000001514 detection method Methods 0.000 abstract description 6
- 238000005530 etching Methods 0.000 abstract description 6
- 239000010931 gold Substances 0.000 abstract description 6
- 229910052738 indium Inorganic materials 0.000 abstract description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052737 gold Inorganic materials 0.000 abstract description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 238000004140 cleaning Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 241000270728 Alligator Species 0.000 description 1
- 206010011224 Cough Diseases 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002574 poison Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Radiation Pyrometers (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、赤外線検知素子の製造方法に係シ、特に小型
高感度な光導電型の赤外線検知素子の製造方法に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing an infrared sensing element, and more particularly to a method for manufacturing a small and highly sensitive photoconductive type infrared sensing element.
一般にインＶウム・アンチモン（工ｎ５ｂ）からなる化
合物半導体によって構成された赤外線検知素子の一種と
して光による半導体の比抵抗の変化を利用して赤外線を
検出する光伝導型検知素子が知られており、咳毒子は感
度がよく応答も速い。In general, a photoconductive type sensing element is known as a type of infrared sensing element constructed from a compound semiconductor made of indium and antimony (N5B), which detects infrared rays by utilizing changes in the specific resistance of the semiconductor due to light. , Cough poison has good sensitivity and quick response.
従来この種の赤外線検知素子を得るには、例えば第１図
に示すようにｔファイヤ支持板１上にＩｎＳｂからなる
化金物半導体基板２を固着し、該基板２番黴十μ解程度
の厚さに研磨、エツチングした後、第２図に示すように
該基板２を所定形状にバターニングし、次いで前記基板
２の上面に図示のように受光部４を画定するように、例
えば金属マスクを用いて蒸着法によシ金（Ａｕ）からな
る厚い電極層８を被着形成する。しかる後第８図の断面
図及び第４図の上面図に示すように前記各電極層８上に
金（Ａｕ） 尋かもなるリード線６を熱圧着法等のボン
デングによって接続し、該リード線６によシ形成された
検知素子の信号出力を取シ出すように構成している。Conventionally, in order to obtain this type of infrared sensing element, for example, as shown in FIG. After polishing and etching, the substrate 2 is patterned into a predetermined shape as shown in FIG. A thick electrode layer 8 made of gold (Au) is deposited by a vapor deposition method. Thereafter, as shown in the cross-sectional view of FIG. 8 and the top view of FIG. The configuration is such that the signal output from the detection element formed by 6 is output.
ところで上述の如き赤外線検知素子は、一般にグユワー
構造の気密容器に真空封入して、液体窺素等の冷媒によ
って冷却して動作させるものであるから、各種工業の熱
計測や公害ガスの検知等の計測装置に実装し、これらの
計測に長時間にわたり連続使用するＫは、前記液状冷媒
の保持時間に限度があシ、使用時間が制約されるといっ
た藺題があって手軽に用いることができない不自由さが
ある。そこで最近においては、上記の如き問題を満足し
得る小型で冷却手段の容品なべ〜チェ素子を利用した電
子冷却型の赤外線検知装置が実用化されつつあシ、上記
装置に用いられる小型で高感度な赤外線検知素子が要望
されている。ところがかかる小型な電子冷却用の赤外線
素子を製作するには、感度を上げるために該素子の厚さ
を１０μｍ以下と極めて薄くシ、受光面を非常に清浄な
状細に保たなければ、受光面の表面近傍に、赤外光によ
り発生するキャリヤの再結合速度が増加し、感度が著し
く低下する。したがって受光部を電極パターンによって
一定し九後、前記受光面をエツチング等によ如清浄にす
る必要があるが従来の製造方法によれば電極の剥離、及
び該剥離により受光面積が増大する欠点があった。を九
かかる素子に対するリード線のボンデイン外接続は、素
子厚がボンディング圧に耐えられない問題があると共に
、素子抵抗が数十オームと従来！イブの素子抵抗の約１
／１０００程度となるため、素子に対するリード線の接
続には極めて良好なオーミッタ接続が要求されることに
なる。Incidentally, the above-mentioned infrared detection element is generally vacuum-sealed in an airtight container with a gray structure and operated by being cooled with a refrigerant such as liquid silicon, so it can be used for heat measurement in various industries, detection of pollution gas, etc. K, which is mounted on a measuring device and used continuously for long periods of time for these measurements, has problems such as a limit on the retention time of the liquid refrigerant and a restriction on the usage time, making it difficult to use easily. There is freedom. Recently, electronically cooled infrared detection devices that are small and use a container-type cooling device as a cooling means have been put into practical use, and can satisfy the above-mentioned problems. A sensitive infrared sensing element is desired. However, in order to manufacture such a small infrared element for electronic cooling, the thickness of the element must be made extremely thin, less than 10 μm, in order to increase sensitivity, and the light receiving surface must be kept extremely clean and thin. Near the surface of the surface, the recombination rate of carriers generated by infrared light increases, resulting in a significant decrease in sensitivity. Therefore, after fixing the light-receiving area with an electrode pattern, it is necessary to clean the light-receiving surface by etching or the like, but the conventional manufacturing method has the disadvantage that the electrodes peel off and the light-receiving area increases due to the peeling. there were. Connecting lead wires to outside the bonding device for devices that require 9.9 volts has the problem that the device thickness cannot withstand the bonding pressure, and the device resistance is several tens of ohms, which is conventional! Approximately 1 of the element resistance of Eve
/1000, therefore, an extremely good ohmitter connection is required for connecting the lead wire to the element.
本発明の目的には、上述した問題を克服し、小し得る新
規な製造方法を提供するにある。かかる目的を達成する
ために１本発明の製造方法は化合物中導体からなる赤外
線検知用チップ上の電極形成予定部に半田によシリード
線を接続した後、該チップ上の全面に金属導電膜を被着
形成し、その後該金属導電膜を選択的に除去して前記チ
ップ上に所定面積の受光部を設けるようにしたことを特
徴としている。It is an object of the present invention to provide a new manufacturing method that overcomes the above-mentioned problems and can be made smaller. In order to achieve such an object, the manufacturing method of the present invention involves connecting a series lead wire by solder to a portion where an electrode is to be formed on an infrared sensing chip made of a conductor in a compound, and then applying a metal conductive film to the entire surface of the chip. The metal conductive film is deposited and then selectively removed to provide a light receiving portion of a predetermined area on the chip.
以下図面を用いて本発明の好ましい製造方法の実施例に
ついて詳細に説明する。Preferred embodiments of the manufacturing method of the present invention will be described in detail below with reference to the drawings.
第６図ないし第８図は本発明に係る冷却型光電変換素子
の製造方法の一実施例を工程順に示す断面図である。ま
ず第６図に示すように、例えばｔファイヤあるいは高比
抵抗なり％ｌ：１ン等からなる支持板２１上に工ｎＳｂ
からなる素子基板２２をエボ＊ｔ’ｇｌＩ系の接着剤で
固着し、該基板２２を１・μｍ以下の所定厚さに４ｉｌ
′Ｉ磨、エツチングし、かつ該基板２２を所定形状にパ
タ一二ソグし、かかる基板２２（以下チップと呼称する
）上の電極形成予定部にインジウム半田２８によって金
（Ａｕ）からなるリード線２４をオーミック接続する。FIGS. 6 to 8 are cross-sectional views showing one embodiment of the method for manufacturing a cooled photoelectric conversion element according to the present invention in the order of steps. First, as shown in FIG.
An element substrate 22 made of
The substrate 22 is polished and etched, and the substrate 22 is patterned into a predetermined shape, and lead wires made of gold (Au) are attached to the areas where electrodes are to be formed on the substrate 22 (hereinafter referred to as chips) using indium solder 28. Connect 24 ohmically.
次いで第６図に示すように、前記リード線２４が接続さ
れた状態のチップ２２を含む支持板上の全面にわ九って
インジウム（Ｉｎ）または錫（Ｓｎ ）等からなる金属
導電膜２６を赤外光が透過しないよう数μｍの厚さに被
着形成し、さらに該金属導電膜２５上にレジスト膜２６
を塗布する。しかる後、該レジスト膜２６を所定のパタ
ーンにバター二ンクシテ第７図に示すように露出した前
記金属導電膜２５を選択的にエツチング除去して電極部
２５１を形成すると共に該電極部２６１によって前記チ
ン１２２上に所定面積の受光部２７を画定した形に設け
る。引自続いて前記レジスト膜２６のパターンをマスク
にして第８図に示すように前記受光部２７のみにエツチ
ング処理を施し、所望の素子抵抗となる厚みに調整する
と共に該受光部の清浄化を行い、その後前記レジスト膜
２６を除去すれば、リード線２４０オーミツク接続部が
確ｖ４に保存され、しか電寸法精度のよい受光面積を有
し、かつ清浄な表面状態の受光部２テをそなえた高感度
の赤外線検知素子を得ることが可能となる。特に本実施
例の方法によれば８０μ簿角程度迄の受光面を精度よく
形成することができるので素子の小型化が容易となる。Next, as shown in FIG. 6, a metal conductive film 26 made of indium (In), tin (Sn), etc. is spread over the entire surface of the support plate including the chip 22 to which the lead wires 24 are connected. A resist film 26 is formed on the metal conductive film 25 to a thickness of several μm so that infrared light does not pass through.
Apply. Thereafter, as shown in FIG. 7, the resist film 26 is patterned into a predetermined pattern and the exposed metal conductive film 25 is selectively etched away to form an electrode portion 251. A light receiving section 27 having a predetermined area is provided on the chin 122 in a defined manner. Subsequently, using the pattern of the resist film 26 as a mask, as shown in FIG. 8, only the light receiving section 27 is etched to adjust the thickness to a desired element resistance, and the light receiving section is cleaned. When the resist film 26 is removed, the ohmic connection of the lead wire 240 is maintained in a secure manner, and the light receiving portion 2 has a light receiving area with good electrical dimensional accuracy and a clean surface condition. It becomes possible to obtain a highly sensitive infrared detection element. In particular, according to the method of this embodiment, a light-receiving surface up to about 80 μm book angle can be formed with high precision, making it easy to miniaturize the device.
なお上記した金属導電膜２ｓ及び受光部２７の選択エツ
チング処理については、共通のエツチンダ液を用いて連
続して夾施するようにしてもよい。Note that the above-described selective etching treatment of the metal conductive film 2s and the light receiving portion 27 may be performed successively using a common etching agent.
以上の説明から明らかなように本発明に係る冷却型赤外
線検知素子の製造方法によれば、素子に直接インジウム
半田によってリード線を接続する方法を用いているので
完全なオーミック接続が得られる。また、ホトリソ工程
によって８０＃鰐角程度迄の形状の受光面を精度よく画
定することが。As is clear from the above description, according to the method for manufacturing a cooled infrared sensing element according to the present invention, a perfect ohmic connection can be obtained because the lead wire is directly connected to the element using indium solder. In addition, it is possible to accurately define a light-receiving surface with a shape up to about 80# alligator angle by the photolithography process.
できると共に、最終工程において電極部を損なうことな
く受光部を所定の厚さにエツチングすると同時にその受
光面も清浄に仕上げることが可能となる等、小型にして
高感度な赤外線検知素子を容易に製造し得る利点を有し
、小型な電子冷却用の光伝−型赤外線検知素子の製造に
適用して極めて有利である。At the same time, it is possible to easily manufacture small and highly sensitive infrared sensing elements, such as etching the light receiving part to a predetermined thickness without damaging the electrode part in the final process, and making it possible to finish the light receiving surface cleanly at the same time. Therefore, it is extremely advantageous to apply it to the production of a small-sized phototransmission type infrared sensing element for electronic cooling.
第１図ないし第４図は、従来の赤外線検知素子の製造方
法を工程順に説明する断面図及び上面図第６図ないし第
８図は、本発明に係る赤外線検知素子の製造方法の一実
施例を工程順に示す断面図である。
図において、２１は支持板、２２は素子基板（チップ）
、２８はインＶつ五半田、！４はリード線、２ｓは金属
導電膜、！６１は電極部、！６は第１図
第２図
第３１４
第４図FIGS. 1 to 4 are cross-sectional views and top views illustrating a conventional method for manufacturing an infrared sensing element in the order of steps. FIGS. 6 to 8 are an embodiment of the method for manufacturing an infrared sensing element according to the present invention. FIG. In the figure, 21 is a support plate, 22 is an element substrate (chip)
, 28 is in V five handa,! 4 is a lead wire, 2s is a metal conductive film,! 61 is the electrode part! 6 is Figure 1 Figure 2 Figure 314 Figure 4
Claims (1)
予定部に半田によ〕リード線を接続した後、跋チップ上
の全面に金属導電膜を被着形成し、その後該金属導電膜
を選択的に除去して前記チップ上に所定面積の受光部を
設けゐようにしたことを特徴とする赤外線検知素子の製
造方法。After connecting lead wires with solder to the areas where electrodes are to be formed on an infrared sensing chip made of a compound semiconductor, a metal conductive film is deposited on the entire surface of the chip, and then the metal conductive film is selectively applied. A method of manufacturing an infrared sensing element, characterized in that a light receiving part of a predetermined area is provided on the chip by removing the light receiving part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56094466A JPS5812376A (en) | 1981-06-17 | 1981-06-17 | Manufacture of infrared ray detecting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56094466A JPS5812376A (en) | 1981-06-17 | 1981-06-17 | Manufacture of infrared ray detecting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5812376A true JPS5812376A (en) | 1983-01-24 |
| JPS6233755B2 JPS6233755B2 (en) | 1987-07-22 |
Family
ID=14111052
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56094466A Granted JPS5812376A (en) | 1981-06-17 | 1981-06-17 | Manufacture of infrared ray detecting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5812376A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62179773A (en) * | 1986-02-04 | 1987-08-06 | Nec Corp | Photoconductive infrared ray detector and manufacture thereof |
| KR20030056676A (en) * | 2001-12-28 | 2003-07-04 | 주식회사 케이이씨 | infrared detector and method of fabricating the same |
-
1981
- 1981-06-17 JP JP56094466A patent/JPS5812376A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62179773A (en) * | 1986-02-04 | 1987-08-06 | Nec Corp | Photoconductive infrared ray detector and manufacture thereof |
| KR20030056676A (en) * | 2001-12-28 | 2003-07-04 | 주식회사 케이이씨 | infrared detector and method of fabricating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6233755B2 (en) | 1987-07-22 |
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