JPS6233755B2 - - Google Patents

Info

Publication number
JPS6233755B2
JPS6233755B2 JP56094466A JP9446681A JPS6233755B2 JP S6233755 B2 JPS6233755 B2 JP S6233755B2 JP 56094466 A JP56094466 A JP 56094466A JP 9446681 A JP9446681 A JP 9446681A JP S6233755 B2 JPS6233755 B2 JP S6233755B2
Authority
JP
Japan
Prior art keywords
infrared sensing
conductive film
chip
manufacturing
light receiving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56094466A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5812376A (ja
Inventor
Takaaki Onoe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56094466A priority Critical patent/JPS5812376A/ja
Publication of JPS5812376A publication Critical patent/JPS5812376A/ja
Publication of JPS6233755B2 publication Critical patent/JPS6233755B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors

Landscapes

  • Radiation Pyrometers (AREA)
  • Light Receiving Elements (AREA)
JP56094466A 1981-06-17 1981-06-17 赤外線検知素子の製造方法 Granted JPS5812376A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56094466A JPS5812376A (ja) 1981-06-17 1981-06-17 赤外線検知素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56094466A JPS5812376A (ja) 1981-06-17 1981-06-17 赤外線検知素子の製造方法

Publications (2)

Publication Number Publication Date
JPS5812376A JPS5812376A (ja) 1983-01-24
JPS6233755B2 true JPS6233755B2 (enrdf_load_stackoverflow) 1987-07-22

Family

ID=14111052

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56094466A Granted JPS5812376A (ja) 1981-06-17 1981-06-17 赤外線検知素子の製造方法

Country Status (1)

Country Link
JP (1) JPS5812376A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62179773A (ja) * 1986-02-04 1987-08-06 Nec Corp 光伝導型赤外線検出器及びその製造方法
KR20030056676A (ko) * 2001-12-28 2003-07-04 주식회사 케이이씨 적외선 감지기의 구조 및 그 제조방법

Also Published As

Publication number Publication date
JPS5812376A (ja) 1983-01-24

Similar Documents

Publication Publication Date Title
US6444487B1 (en) Flexible silicon strain gage
CA2381081C (en) Dual wafer attachment process
US4188258A (en) Process for fabricating strain gage transducer
JPH02196929A (ja) 赤外線検出器
US4287772A (en) Strain gage transducer and process for fabricating same
US20070164417A1 (en) Design and fabrication method for microsensor
US4319258A (en) Schottky barrier photovoltaic detector
US4104789A (en) Photodetector mounting and connecting
US6094127A (en) Infrared bolometer and method for manufacturing same
US4224520A (en) Room temperature two color infrared detector
US4355456A (en) Process of fabricating a Schottky barrier photovoltaic detector
JPS6212454B2 (enrdf_load_stackoverflow)
JPS6233755B2 (enrdf_load_stackoverflow)
US5561295A (en) Infrared-responsive photoconductive array and method of making
Norkus et al. Process technologies for high-resolution infrared detectors based on LiTaO3
JPH02215583A (ja) 熱画像形成装置およびその製造方法
US5631467A (en) Etching of ceramic materials with an elevated thin film
JPS61181103A (ja) 白金測温抵抗体
US4089991A (en) Process for applying electrical conductors for Dewar flask
JP2772776B2 (ja) サーモパイル
JPH039576A (ja) 赤外線検知素子
JPH07128140A (ja) 赤外線検出素子
EP1141669B1 (en) Infrared bolometer and method for manufacturing same
JPH0590553A (ja) 赤外線検出装置およびその製造方法
JPS63316489A (ja) 赤外線センサの製造方法