JPS58122774A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JPS58122774A
JPS58122774A JP57004715A JP471582A JPS58122774A JP S58122774 A JPS58122774 A JP S58122774A JP 57004715 A JP57004715 A JP 57004715A JP 471582 A JP471582 A JP 471582A JP S58122774 A JPS58122774 A JP S58122774A
Authority
JP
Japan
Prior art keywords
layer
oxide film
oxidation
semiconductor layer
resistant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57004715A
Other languages
English (en)
Japanese (ja)
Other versions
JPH023307B2 (enExample
Inventor
Yoshihisa Mizutani
水谷　嘉久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57004715A priority Critical patent/JPS58122774A/ja
Publication of JPS58122774A publication Critical patent/JPS58122774A/ja
Publication of JPH023307B2 publication Critical patent/JPH023307B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57004715A 1982-01-14 1982-01-14 半導体装置及びその製造方法 Granted JPS58122774A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57004715A JPS58122774A (ja) 1982-01-14 1982-01-14 半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57004715A JPS58122774A (ja) 1982-01-14 1982-01-14 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPS58122774A true JPS58122774A (ja) 1983-07-21
JPH023307B2 JPH023307B2 (enExample) 1990-01-23

Family

ID=11591573

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57004715A Granted JPS58122774A (ja) 1982-01-14 1982-01-14 半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPS58122774A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05136345A (ja) * 1991-11-12 1993-06-01 Nec Ic Microcomput Syst Ltd 半導体装置
JP2011181918A (ja) * 2010-02-05 2011-09-15 Semiconductor Energy Lab Co Ltd 電界効果トランジスタおよび半導体装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05136345A (ja) * 1991-11-12 1993-06-01 Nec Ic Microcomput Syst Ltd 半導体装置
JP2011181918A (ja) * 2010-02-05 2011-09-15 Semiconductor Energy Lab Co Ltd 電界効果トランジスタおよび半導体装置
JP2013008988A (ja) * 2010-02-05 2013-01-10 Semiconductor Energy Lab Co Ltd 半導体装置
JP2015111742A (ja) * 2010-02-05 2015-06-18 株式会社半導体エネルギー研究所 半導体装置

Also Published As

Publication number Publication date
JPH023307B2 (enExample) 1990-01-23

Similar Documents

Publication Publication Date Title
US4222164A (en) Method of fabrication of self-aligned metal-semiconductor field effect transistors
JPH02219253A (ja) 半導体集積回路装置の製造方法
US4465705A (en) Method of making semiconductor devices
JPS58122774A (ja) 半導体装置及びその製造方法
JPH0473296B2 (enExample)
JPH0272661A (ja) 半導体装置の製造方法
JPS60224272A (ja) 絶縁基板ｍｉｓ型電界効果トランジスタの製造方法
JPH0456456B2 (enExample)
JPH0316150A (ja) 半導体素子の製造方法
JPH0732164B2 (ja) 半導体デバイス製造法
JPS6331097B2 (enExample)
JPH023306B2 (enExample)
JPS60733A (ja) 半導体装置とその製造方法
JP2720592B2 (ja) 半導体装置の製造方法
JPS59129474A (ja) 半導体装置の製造方法
JPH03156956A (ja) 半導体装置の製造方法
JPH03108755A (ja) 半導体装置の製造方法
JPS59169172A (ja) 半導体記憶装置の製造方法
JPH01185969A (ja) 半導体装置の製造方法
KR950024298A (ko) 반도체장치 매몰층 제조 방법
JPH04199637A (ja) 半導体装置の製造方法
JPS59155167A (ja) 半導体装置の製造方法
JPH01241861A (ja) 半導体装置の製造方法
JPH06163450A (ja) 半導体装置の製造方法
JPS61198746A (ja) 半導体装置の製造方法