JPH023307B2 - - Google Patents

Info

Publication number
JPH023307B2
JPH023307B2 JP57004715A JP471582A JPH023307B2 JP H023307 B2 JPH023307 B2 JP H023307B2 JP 57004715 A JP57004715 A JP 57004715A JP 471582 A JP471582 A JP 471582A JP H023307 B2 JPH023307 B2 JP H023307B2
Authority
JP
Japan
Prior art keywords
oxide film
oxidation
semiconductor layer
layer
insulating substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57004715A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58122774A (ja
Inventor
Yoshihisa Mizutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57004715A priority Critical patent/JPS58122774A/ja
Publication of JPS58122774A publication Critical patent/JPS58122774A/ja
Publication of JPH023307B2 publication Critical patent/JPH023307B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57004715A 1982-01-14 1982-01-14 半導体装置及びその製造方法 Granted JPS58122774A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57004715A JPS58122774A (ja) 1982-01-14 1982-01-14 半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57004715A JPS58122774A (ja) 1982-01-14 1982-01-14 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPS58122774A JPS58122774A (ja) 1983-07-21
JPH023307B2 true JPH023307B2 (enExample) 1990-01-23

Family

ID=11591573

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57004715A Granted JPS58122774A (ja) 1982-01-14 1982-01-14 半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPS58122774A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05136345A (ja) * 1991-11-12 1993-06-01 Nec Ic Microcomput Syst Ltd 半導体装置
WO2011096286A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor and semiconductor device

Also Published As

Publication number Publication date
JPS58122774A (ja) 1983-07-21

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