JPS58118143A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS58118143A JPS58118143A JP57000672A JP67282A JPS58118143A JP S58118143 A JPS58118143 A JP S58118143A JP 57000672 A JP57000672 A JP 57000672A JP 67282 A JP67282 A JP 67282A JP S58118143 A JPS58118143 A JP S58118143A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- diode
- electrode
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Semiconductor Memories (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57000672A JPS58118143A (ja) | 1982-01-06 | 1982-01-06 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57000672A JPS58118143A (ja) | 1982-01-06 | 1982-01-06 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58118143A true JPS58118143A (ja) | 1983-07-14 |
JPH0456468B2 JPH0456468B2 (enrdf_load_stackoverflow) | 1992-09-08 |
Family
ID=11480228
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57000672A Granted JPS58118143A (ja) | 1982-01-06 | 1982-01-06 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58118143A (enrdf_load_stackoverflow) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6167261A (ja) * | 1984-09-10 | 1986-04-07 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JPS6167262A (ja) * | 1984-09-10 | 1986-04-07 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JPS6167263A (ja) * | 1984-09-10 | 1986-04-07 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
JPS6171665A (ja) * | 1984-09-17 | 1986-04-12 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
JPS6298665A (ja) * | 1985-10-25 | 1987-05-08 | Hitachi Ltd | 半導体集積回路装置 |
JPS62169381A (ja) * | 1987-01-05 | 1987-07-25 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JPS62169380A (ja) * | 1987-01-05 | 1987-07-25 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JPS62169378A (ja) * | 1987-01-05 | 1987-07-25 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
JPS62169382A (ja) * | 1987-01-05 | 1987-07-25 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JPS62169379A (ja) * | 1987-01-05 | 1987-07-25 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JPS62174979A (ja) * | 1987-01-05 | 1987-07-31 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JPS63176789U (enrdf_load_stackoverflow) * | 1986-10-08 | 1988-11-16 | ||
WO2013046931A1 (ja) * | 2011-09-28 | 2013-04-04 | 浜松ホトニクス株式会社 | 放射線検出器 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54139342A (en) * | 1978-04-20 | 1979-10-29 | Canon Inc | Information processing unit |
JPS55127083A (en) * | 1979-03-26 | 1980-10-01 | Matsushita Electric Ind Co Ltd | Semiconductor element |
JPS56135981A (en) * | 1980-03-28 | 1981-10-23 | Canon Inc | Photoelectric conversion element |
JPS56135982A (en) * | 1980-03-28 | 1981-10-23 | Canon Inc | Array of photoelectric conversion element |
-
1982
- 1982-01-06 JP JP57000672A patent/JPS58118143A/ja active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54139342A (en) * | 1978-04-20 | 1979-10-29 | Canon Inc | Information processing unit |
JPS55127083A (en) * | 1979-03-26 | 1980-10-01 | Matsushita Electric Ind Co Ltd | Semiconductor element |
JPS56135981A (en) * | 1980-03-28 | 1981-10-23 | Canon Inc | Photoelectric conversion element |
JPS56135982A (en) * | 1980-03-28 | 1981-10-23 | Canon Inc | Array of photoelectric conversion element |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6167261A (ja) * | 1984-09-10 | 1986-04-07 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JPS6167262A (ja) * | 1984-09-10 | 1986-04-07 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JPS6167263A (ja) * | 1984-09-10 | 1986-04-07 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
JPS6171665A (ja) * | 1984-09-17 | 1986-04-12 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
JPS6298665A (ja) * | 1985-10-25 | 1987-05-08 | Hitachi Ltd | 半導体集積回路装置 |
JPS63176789U (enrdf_load_stackoverflow) * | 1986-10-08 | 1988-11-16 | ||
JPS62169380A (ja) * | 1987-01-05 | 1987-07-25 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JPS62169378A (ja) * | 1987-01-05 | 1987-07-25 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
JPS62169382A (ja) * | 1987-01-05 | 1987-07-25 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JPS62169379A (ja) * | 1987-01-05 | 1987-07-25 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JPS62174979A (ja) * | 1987-01-05 | 1987-07-31 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JPS62169381A (ja) * | 1987-01-05 | 1987-07-25 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
WO2013046931A1 (ja) * | 2011-09-28 | 2013-04-04 | 浜松ホトニクス株式会社 | 放射線検出器 |
US9508763B2 (en) | 2011-09-28 | 2016-11-29 | Hamamatsu Photonics K.K. | Radiation detector |
Also Published As
Publication number | Publication date |
---|---|
JPH0456468B2 (enrdf_load_stackoverflow) | 1992-09-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW469655B (en) | Semiconductor device for light-emitting or light-receiving and method of producing the same | |
JPS58118143A (ja) | 半導体装置 | |
EP0081827A2 (en) | Semiconductor optical logic device | |
US5633526A (en) | Photodiode array and method for manufacturing the same | |
US3390022A (en) | Semiconductor device and process for producing same | |
US5523610A (en) | Photodiode array and method for manufacturing the same | |
US4704624A (en) | Semiconductor photoelectric conversion device with partly crystallized intrinsic layer | |
JPS6322474B2 (enrdf_load_stackoverflow) | ||
CN117766460A (zh) | 蓝宝石上锗晶圆及其制造方法、阵列芯片及其制造方法 | |
US3290760A (en) | Method of making a composite insulator semiconductor wafer | |
JPS5996779A (ja) | 光電変換装置 | |
US4364973A (en) | Method for fabricating a solid-state imaging device using photoconductive film | |
JP7565814B2 (ja) | 積層型半導体装置及びその製造方法 | |
JPS592344A (ja) | 半導体集積回路の製造方法 | |
JPS58118142A (ja) | 半導体装置 | |
KR100208645B1 (ko) | 광 반도체 장치 | |
JP2687831B2 (ja) | 受光半導体装置、その製造方法およびそれを用いた光結合装置 | |
JPS63156373A (ja) | フオトダイオ−ドアレイの製法 | |
JPS62256484A (ja) | 光入力型mosトランジスタ | |
JP3182663B2 (ja) | フォトダイオードアレイおよびその製造法 | |
JPS5996780A (ja) | 光電変換装置 | |
JPS6058633A (ja) | 半導体集積回路装置 | |
JPH02111068A (ja) | 密着形イメージセンサ | |
JPS5952872A (ja) | 受光装置 | |
JPS62202568A (ja) | 光電変換装置 |