JPS58116739A - 膜多結晶体の粒子サイズの制御方法 - Google Patents

膜多結晶体の粒子サイズの制御方法

Info

Publication number
JPS58116739A
JPS58116739A JP21287181A JP21287181A JPS58116739A JP S58116739 A JPS58116739 A JP S58116739A JP 21287181 A JP21287181 A JP 21287181A JP 21287181 A JP21287181 A JP 21287181A JP S58116739 A JPS58116739 A JP S58116739A
Authority
JP
Japan
Prior art keywords
crystal
temperature
film
heat treatment
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21287181A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6244403B2 (enrdf_load_stackoverflow
Inventor
Yoshihiro Matsuo
嘉浩 松尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP21287181A priority Critical patent/JPS58116739A/ja
Publication of JPS58116739A publication Critical patent/JPS58116739A/ja
Publication of JPS6244403B2 publication Critical patent/JPS6244403B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
JP21287181A 1981-12-29 1981-12-29 膜多結晶体の粒子サイズの制御方法 Granted JPS58116739A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21287181A JPS58116739A (ja) 1981-12-29 1981-12-29 膜多結晶体の粒子サイズの制御方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21287181A JPS58116739A (ja) 1981-12-29 1981-12-29 膜多結晶体の粒子サイズの制御方法

Publications (2)

Publication Number Publication Date
JPS58116739A true JPS58116739A (ja) 1983-07-12
JPS6244403B2 JPS6244403B2 (enrdf_load_stackoverflow) 1987-09-21

Family

ID=16629652

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21287181A Granted JPS58116739A (ja) 1981-12-29 1981-12-29 膜多結晶体の粒子サイズの制御方法

Country Status (1)

Country Link
JP (1) JPS58116739A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60200887A (ja) * 1984-03-23 1985-10-11 Nippon Sheet Glass Co Ltd 磁性薄膜の製造方法
JPS63185016A (ja) * 1987-01-27 1988-07-30 Sony Corp 半導体薄膜の形成方法
US5733369A (en) * 1986-03-28 1998-03-31 Canon Kabushiki Kaisha Method for forming crystal
US5846320A (en) * 1986-03-31 1998-12-08 Canon Kabushiki Kaisha Method for forming crystal and crystal article obtained by said method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60200887A (ja) * 1984-03-23 1985-10-11 Nippon Sheet Glass Co Ltd 磁性薄膜の製造方法
US5733369A (en) * 1986-03-28 1998-03-31 Canon Kabushiki Kaisha Method for forming crystal
US5853478A (en) * 1986-03-28 1998-12-29 Canon Kabushiki Kaisha Method for forming crystal and crystal article obtained by said method
US5846320A (en) * 1986-03-31 1998-12-08 Canon Kabushiki Kaisha Method for forming crystal and crystal article obtained by said method
JPS63185016A (ja) * 1987-01-27 1988-07-30 Sony Corp 半導体薄膜の形成方法

Also Published As

Publication number Publication date
JPS6244403B2 (enrdf_load_stackoverflow) 1987-09-21

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