JPS5796546A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5796546A
JPS5796546A JP55173557A JP17355780A JPS5796546A JP S5796546 A JPS5796546 A JP S5796546A JP 55173557 A JP55173557 A JP 55173557A JP 17355780 A JP17355780 A JP 17355780A JP S5796546 A JPS5796546 A JP S5796546A
Authority
JP
Japan
Prior art keywords
film
wiring
layer
mosi2
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55173557A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6146057B2 (enrdf_load_stackoverflow
Inventor
Toru Mochizuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55173557A priority Critical patent/JPS5796546A/ja
Publication of JPS5796546A publication Critical patent/JPS5796546A/ja
Publication of JPS6146057B2 publication Critical patent/JPS6146057B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP55173557A 1980-12-09 1980-12-09 Semiconductor device Granted JPS5796546A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55173557A JPS5796546A (en) 1980-12-09 1980-12-09 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55173557A JPS5796546A (en) 1980-12-09 1980-12-09 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5796546A true JPS5796546A (en) 1982-06-15
JPS6146057B2 JPS6146057B2 (enrdf_load_stackoverflow) 1986-10-11

Family

ID=15962747

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55173557A Granted JPS5796546A (en) 1980-12-09 1980-12-09 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5796546A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0641174U (ja) * 1992-10-30 1994-05-31 ミツミ電機株式会社 はんだ付け装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5413283A (en) * 1977-06-30 1979-01-31 Ibm Method of forming metal silicide layer on substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5413283A (en) * 1977-06-30 1979-01-31 Ibm Method of forming metal silicide layer on substrate

Also Published As

Publication number Publication date
JPS6146057B2 (enrdf_load_stackoverflow) 1986-10-11

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