JPS5793526A - Forming method for thin film pattern - Google Patents

Forming method for thin film pattern

Info

Publication number
JPS5793526A
JPS5793526A JP16961980A JP16961980A JPS5793526A JP S5793526 A JPS5793526 A JP S5793526A JP 16961980 A JP16961980 A JP 16961980A JP 16961980 A JP16961980 A JP 16961980A JP S5793526 A JPS5793526 A JP S5793526A
Authority
JP
Japan
Prior art keywords
film
thin film
patterning
mask
magnetic substance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16961980A
Other languages
Japanese (ja)
Inventor
Shinji Narushige
Tsuneo Yoshinari
Mitsuo Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Computer Basic Technology Research Association Corp
Original Assignee
Computer Basic Technology Research Association Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Computer Basic Technology Research Association Corp filed Critical Computer Basic Technology Research Association Corp
Priority to JP16961980A priority Critical patent/JPS5793526A/en
Publication of JPS5793526A publication Critical patent/JPS5793526A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Magnetic Heads (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To pattern a thin film with high precision by depositing an organic resin film and a metal film on a thin film on a step part on a substrate to reduce the step, by patterning the metal film highly precisely to take said film as a mask and by patterning the organic resin film. CONSTITUTION:A lower part magnetic substance film 2 is formed on a substrate 1, and an electric conductor 4 wound in a plural number of turns and the second insulating layer 6 insulating among the conductors are formed on the first insulating layer 5. Further, an upper part magnetic substance 3 comprising permalloy is formed, and polyimide resin 7 is applied so that when a step D is 6mum, a step E after applied is reduced to 1.5mum. A Mo metal film 8 is formed, and a photoresist is applied. And, by patterning said resist to use it as a mask, a Mo film is patterned, and then by using the Mo film as a mask the resin 7 and permaloy are patterned. Hereby, a high precision pattern is formed for a thin film having a step, in particular, a magnetic substance film on a magnetic head.
JP16961980A 1980-12-03 1980-12-03 Forming method for thin film pattern Pending JPS5793526A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16961980A JPS5793526A (en) 1980-12-03 1980-12-03 Forming method for thin film pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16961980A JPS5793526A (en) 1980-12-03 1980-12-03 Forming method for thin film pattern

Publications (1)

Publication Number Publication Date
JPS5793526A true JPS5793526A (en) 1982-06-10

Family

ID=15889850

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16961980A Pending JPS5793526A (en) 1980-12-03 1980-12-03 Forming method for thin film pattern

Country Status (1)

Country Link
JP (1) JPS5793526A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6861177B2 (en) 2002-02-21 2005-03-01 Hitachi Global Storage Technologies Netherlands B.V. Method of forming a read sensor using a lift-off mask having a hardmask layer and a release layer
US6913870B2 (en) 2002-05-10 2005-07-05 International Business Machines Corporation Fabrication process using a thin liftoff stencil formed by an image transfer process

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51107775A (en) * 1975-03-19 1976-09-24 Hitachi Ltd Handotaisochino bisaikakohoho
JPS52135713A (en) * 1976-05-10 1977-11-14 Hitachi Ltd Formation of magnetic head
JPS5381110A (en) * 1976-12-25 1978-07-18 Toshiba Corp Manufacture of magnetic film head

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51107775A (en) * 1975-03-19 1976-09-24 Hitachi Ltd Handotaisochino bisaikakohoho
JPS52135713A (en) * 1976-05-10 1977-11-14 Hitachi Ltd Formation of magnetic head
JPS5381110A (en) * 1976-12-25 1978-07-18 Toshiba Corp Manufacture of magnetic film head

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6861177B2 (en) 2002-02-21 2005-03-01 Hitachi Global Storage Technologies Netherlands B.V. Method of forming a read sensor using a lift-off mask having a hardmask layer and a release layer
US6913870B2 (en) 2002-05-10 2005-07-05 International Business Machines Corporation Fabrication process using a thin liftoff stencil formed by an image transfer process

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