JPS5791523A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5791523A
JPS5791523A JP16749180A JP16749180A JPS5791523A JP S5791523 A JPS5791523 A JP S5791523A JP 16749180 A JP16749180 A JP 16749180A JP 16749180 A JP16749180 A JP 16749180A JP S5791523 A JPS5791523 A JP S5791523A
Authority
JP
Japan
Prior art keywords
exposure
substrate
pattern
projection
recess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16749180A
Other languages
English (en)
Inventor
Kazumasa Shigematsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16749180A priority Critical patent/JPS5791523A/ja
Publication of JPS5791523A publication Critical patent/JPS5791523A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
JP16749180A 1980-11-28 1980-11-28 Manufacture of semiconductor device Pending JPS5791523A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16749180A JPS5791523A (en) 1980-11-28 1980-11-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16749180A JPS5791523A (en) 1980-11-28 1980-11-28 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5791523A true JPS5791523A (en) 1982-06-07

Family

ID=15850658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16749180A Pending JPS5791523A (en) 1980-11-28 1980-11-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5791523A (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57138638A (en) * 1981-02-20 1982-08-27 Toshiba Corp Photoetching mask
JPS59211229A (ja) * 1983-05-16 1984-11-30 Mitsubishi Electric Corp パタ−ン形成方法
JPS60176251A (ja) * 1984-02-23 1985-09-10 Nec Corp 半導体装置
JPS61181129A (ja) * 1985-02-06 1986-08-13 Fujitsu Ltd 露光方法
JPS63220249A (ja) * 1987-03-10 1988-09-13 Japan Radio Co Ltd 曲率面における回路パタ−ンの形成方法
JPS6461753A (en) * 1987-09-01 1989-03-08 Nec Corp Shape data correcting method for optical mask
JPH02226724A (ja) * 1989-02-28 1990-09-10 New Japan Radio Co Ltd 集積回路装置の製造方法
JP2016502127A (ja) * 2012-10-23 2016-01-21 シーエスエムシー テクノロジーズ エフエイビー１ カンパニー リミテッド 高段差斜面に基づくフォトリソグラフィ方法及びシステム

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57138638A (en) * 1981-02-20 1982-08-27 Toshiba Corp Photoetching mask
JPS59211229A (ja) * 1983-05-16 1984-11-30 Mitsubishi Electric Corp パタ−ン形成方法
JPS60176251A (ja) * 1984-02-23 1985-09-10 Nec Corp 半導体装置
JPH0230180B2 (ja) * 1984-02-23 1990-07-04 Nippon Electric Co
JPS61181129A (ja) * 1985-02-06 1986-08-13 Fujitsu Ltd 露光方法
JPH0321086B2 (ja) * 1985-02-06 1991-03-20 Fujitsu Ltd
JPS63220249A (ja) * 1987-03-10 1988-09-13 Japan Radio Co Ltd 曲率面における回路パタ−ンの形成方法
JPS6461753A (en) * 1987-09-01 1989-03-08 Nec Corp Shape data correcting method for optical mask
JPH02226724A (ja) * 1989-02-28 1990-09-10 New Japan Radio Co Ltd 集積回路装置の製造方法
JP2016502127A (ja) * 2012-10-23 2016-01-21 シーエスエムシー テクノロジーズ エフエイビー１ カンパニー リミテッド 高段差斜面に基づくフォトリソグラフィ方法及びシステム

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