JPS5790990A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

Info

Publication number
JPS5790990A
JPS5790990A JP16777380A JP16777380A JPS5790990A JP S5790990 A JPS5790990 A JP S5790990A JP 16777380 A JP16777380 A JP 16777380A JP 16777380 A JP16777380 A JP 16777380A JP S5790990 A JPS5790990 A JP S5790990A
Authority
JP
Japan
Prior art keywords
light
light emitting
layer
active layer
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16777380A
Other languages
English (en)
Inventor
Toshiro Hayakawa
Jiyunkou Takagi
Naotaka Otsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP16777380A priority Critical patent/JPS5790990A/ja
Publication of JPS5790990A publication Critical patent/JPS5790990A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP16777380A 1980-11-27 1980-11-27 Semiconductor light emitting device Pending JPS5790990A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16777380A JPS5790990A (en) 1980-11-27 1980-11-27 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16777380A JPS5790990A (en) 1980-11-27 1980-11-27 Semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS5790990A true JPS5790990A (en) 1982-06-05

Family

ID=15855831

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16777380A Pending JPS5790990A (en) 1980-11-27 1980-11-27 Semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS5790990A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59986A (ja) * 1982-06-25 1984-01-06 Sharp Corp 半導体レ−ザ素子
JPS59213179A (ja) * 1983-05-19 1984-12-03 Toshiba Corp 発光素子
JP2007507083A (ja) * 2003-06-27 2007-03-22 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング 発光半導体素子

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59986A (ja) * 1982-06-25 1984-01-06 Sharp Corp 半導体レ−ザ素子
JPS6359554B2 (ja) * 1982-06-25 1988-11-21
JPS59213179A (ja) * 1983-05-19 1984-12-03 Toshiba Corp 発光素子
JP2007507083A (ja) * 2003-06-27 2007-03-22 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング 発光半導体素子

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