JPS6480092A - Gaas semiconductor light emitting element - Google Patents

Gaas semiconductor light emitting element

Info

Publication number
JPS6480092A
JPS6480092A JP23660787A JP23660787A JPS6480092A JP S6480092 A JPS6480092 A JP S6480092A JP 23660787 A JP23660787 A JP 23660787A JP 23660787 A JP23660787 A JP 23660787A JP S6480092 A JPS6480092 A JP S6480092A
Authority
JP
Japan
Prior art keywords
gaas
light emitting
emitting element
semiconductor light
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23660787A
Other languages
Japanese (ja)
Inventor
Norio Okubo
Toru Kashiwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP23660787A priority Critical patent/JPS6480092A/en
Publication of JPS6480092A publication Critical patent/JPS6480092A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To restrain a semiconductor light emitting element from deteriorating so as to lengthen the span of life by a method wherein In is doped into a GaAs epitaxial film which composes a bufter layer, where the amout of In to be doped is 0.001-1% of Ga by mole. CONSTITUTION:An n-type In doped GaAs buffer layer 2 and an n-type GaAs active layer 3 are successively formed on a GaAs substrate 1, where In 0.001-1% if Ga by mole is doped into a GaAs epitaxial layer which composes the buffer layer 2. Then, the mismatching between the substrate 1 and the buffer layer 2 is eliminated, the dislocation of the buffer layer 2 from the sub strate 1 is prevented, and a p-n junction is formed, where an injection current is small. By these processes, a semiconductor light emitting element is prevented from deteriorating, and thus it can be lengthened in life.
JP23660787A 1987-09-21 1987-09-21 Gaas semiconductor light emitting element Pending JPS6480092A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23660787A JPS6480092A (en) 1987-09-21 1987-09-21 Gaas semiconductor light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23660787A JPS6480092A (en) 1987-09-21 1987-09-21 Gaas semiconductor light emitting element

Publications (1)

Publication Number Publication Date
JPS6480092A true JPS6480092A (en) 1989-03-24

Family

ID=17003145

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23660787A Pending JPS6480092A (en) 1987-09-21 1987-09-21 Gaas semiconductor light emitting element

Country Status (1)

Country Link
JP (1) JPS6480092A (en)

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