JPS5636175A - Light emission semiconductor element - Google Patents

Light emission semiconductor element

Info

Publication number
JPS5636175A
JPS5636175A JP11116179A JP11116179A JPS5636175A JP S5636175 A JPS5636175 A JP S5636175A JP 11116179 A JP11116179 A JP 11116179A JP 11116179 A JP11116179 A JP 11116179A JP S5636175 A JPS5636175 A JP S5636175A
Authority
JP
Japan
Prior art keywords
layer
active
dislocation
impurity
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11116179A
Other languages
Japanese (ja)
Inventor
Shigenobu Yamagoshi
Tomonobu Sugawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11116179A priority Critical patent/JPS5636175A/en
Publication of JPS5636175A publication Critical patent/JPS5636175A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To fix dislocation in crystal in an active region by an interaction between the dislocation and impurity atoms, suppress the growth of the dislocation and lengthen lifetime, by setting the impurity concentration of the active region at or above a prescribed level. CONSTITUTION:A Ga1-xAlxAs layer 2, an active Ga1-yAlyAs layer 3 and a Ga1-zAlzAs layer 4 are epitaxially grown on a GaAs substrate 1. The Al contents of the epitaxial layers are conditioned as y<=x and y<=z. A high concentration impurity region window layer 5, an annular light output side electrode 6, an opposite electrode 7 and a separation region 8 for electrically isolating elements from each other are provided on the epitaxial growth substrate. The impurity concentration of the active Ga1-yAlyAs layer 3 is set at 3X10<18>cm<-3> or more.
JP11116179A 1979-08-31 1979-08-31 Light emission semiconductor element Pending JPS5636175A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11116179A JPS5636175A (en) 1979-08-31 1979-08-31 Light emission semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11116179A JPS5636175A (en) 1979-08-31 1979-08-31 Light emission semiconductor element

Publications (1)

Publication Number Publication Date
JPS5636175A true JPS5636175A (en) 1981-04-09

Family

ID=14554015

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11116179A Pending JPS5636175A (en) 1979-08-31 1979-08-31 Light emission semiconductor element

Country Status (1)

Country Link
JP (1) JPS5636175A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4639275A (en) * 1982-04-22 1987-01-27 The Board Of Trustees Of The University Of Illinois Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4639275A (en) * 1982-04-22 1987-01-27 The Board Of Trustees Of The University Of Illinois Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor

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