JPS6450415A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6450415A JPS6450415A JP20677387A JP20677387A JPS6450415A JP S6450415 A JPS6450415 A JP S6450415A JP 20677387 A JP20677387 A JP 20677387A JP 20677387 A JP20677387 A JP 20677387A JP S6450415 A JPS6450415 A JP S6450415A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- buffer layer
- growing
- component
- buffer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Lasers (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To prevent decrease in crystallizability, by performing vapor growth of a GaInAsP layer, whose constituting ratio of As is low, on a GaAs single crystal, and performing the vapor growth of a semiconductor layer, which does not include As component, on the GaInAsP layer. CONSTITUTION:A second buffer layer 7, which comprises an N-type (Ga0.52In0.48)(As0.01P0.99), is provided between a buffer layer 2 and an N-type clad layer 3. In this way, the growing step of the second buffer layer 7, whose As constituting ratio is low, is provided between the growing of the first buffer layer 2 and the growing of the N-type clad layer 3. Since AsH3 gas including an As component is present in the growing atmosphere when the second buffer layer 7 is grown, elimination of the As component from the first buffer layer 2 can be prevented. Therefore the crystallizability of the first and second buffer layers 2 and 3 are not deteriorated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62206773A JP2708750B2 (en) | 1987-08-20 | 1987-08-20 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62206773A JP2708750B2 (en) | 1987-08-20 | 1987-08-20 | Method for manufacturing semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8055092A Division JP2630929B2 (en) | 1996-03-12 | 1996-03-12 | Semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6450415A true JPS6450415A (en) | 1989-02-27 |
| JP2708750B2 JP2708750B2 (en) | 1998-02-04 |
Family
ID=16528849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62206773A Expired - Lifetime JP2708750B2 (en) | 1987-08-20 | 1987-08-20 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2708750B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010045169A (en) * | 2008-08-12 | 2010-02-25 | Stanley Electric Co Ltd | Compound semiconductor device and method of manufacturing the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61166124A (en) * | 1985-01-18 | 1986-07-26 | Oki Electric Ind Co Ltd | Vapor-phase epitaxial growth method |
-
1987
- 1987-08-20 JP JP62206773A patent/JP2708750B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61166124A (en) * | 1985-01-18 | 1986-07-26 | Oki Electric Ind Co Ltd | Vapor-phase epitaxial growth method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010045169A (en) * | 2008-08-12 | 2010-02-25 | Stanley Electric Co Ltd | Compound semiconductor device and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2708750B2 (en) | 1998-02-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |