JPS5635490A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS5635490A
JPS5635490A JP11121579A JP11121579A JPS5635490A JP S5635490 A JPS5635490 A JP S5635490A JP 11121579 A JP11121579 A JP 11121579A JP 11121579 A JP11121579 A JP 11121579A JP S5635490 A JPS5635490 A JP S5635490A
Authority
JP
Japan
Prior art keywords
active layer
layer
laser element
type
gaalas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11121579A
Other languages
Japanese (ja)
Inventor
Morichika Yano
Saburo Yamamoto
Yukio Kurata
Kaneki Matsui
Toshiro Hayakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP11121579A priority Critical patent/JPS5635490A/en
Publication of JPS5635490A publication Critical patent/JPS5635490A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To largely improve the operation lifetime of the laser element by controlling the density of P added to a GaAlAs active layer and thus alleviating the discordance of the lattice constant thereof. CONSTITUTION:The lifetime of the laser depends upon a slight lattice constant difference at the time of hetero epitaxial growth, a slight lattice constance variation caused by doping, and strains introduced by the mounting of electrodes and heat dissipating plate thereon. An N type GaAlAs layer and a P type GaAlAs active layer, a p type GaAlAs layer and a p type GaAs layer are sequentially laminated on an N type GaAs substrate, the addition of P to the active layer is controlled, crystal defect is prevented at the time of growing the active layer, lattice distortion thereof is prevented at room temperature, and the deterioration of a laser element can be remarkably suppressed.
JP11121579A 1979-08-30 1979-08-30 Semiconductor laser element Pending JPS5635490A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11121579A JPS5635490A (en) 1979-08-30 1979-08-30 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11121579A JPS5635490A (en) 1979-08-30 1979-08-30 Semiconductor laser element

Publications (1)

Publication Number Publication Date
JPS5635490A true JPS5635490A (en) 1981-04-08

Family

ID=14555434

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11121579A Pending JPS5635490A (en) 1979-08-30 1979-08-30 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS5635490A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112072467A (en) * 2019-06-11 2020-12-11 全新光电科技股份有限公司 Semiconductor laser diode
CN112242642A (en) * 2019-07-19 2021-01-19 全新光电科技股份有限公司 Vertical cavity surface emitting laser diode (VCSEL) including AlGaAsP layer with compressive stress

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112072467A (en) * 2019-06-11 2020-12-11 全新光电科技股份有限公司 Semiconductor laser diode
CN112242642A (en) * 2019-07-19 2021-01-19 全新光电科技股份有限公司 Vertical cavity surface emitting laser diode (VCSEL) including AlGaAsP layer with compressive stress
US11721954B2 (en) 2019-07-19 2023-08-08 Visual Photonics Epitaxy Co., Ltd. Vertical cavity surface emitting laser diode (VCSEL) having AlGaAsP layer with compressive strain

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