JPS5635489A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS5635489A
JPS5635489A JP11121479A JP11121479A JPS5635489A JP S5635489 A JPS5635489 A JP S5635489A JP 11121479 A JP11121479 A JP 11121479A JP 11121479 A JP11121479 A JP 11121479A JP S5635489 A JPS5635489 A JP S5635489A
Authority
JP
Japan
Prior art keywords
active layer
layer
lattice constant
lattice
gaalas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11121479A
Other languages
Japanese (ja)
Inventor
Morichika Yano
Saburo Yamamoto
Yukio Kurata
Kaneki Matsui
Toshiro Hayakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP11121479A priority Critical patent/JPS5635489A/en
Publication of JPS5635489A publication Critical patent/JPS5635489A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To contrive the extension of the lifetime of the semiconductor laser element by adding P only to a GaAlAs active layer and alleviating the lattice strain therein. CONSTITUTION:The lifetime of the laser depends upon a strain caused on the basis of a slight lattice constant difference at the time of hetero epitaxial growth, a slight lattice constant variation caued by a doping, and distortion introduced upon mounting of electrodes and heat dissipating plate. An N type GaAlAs active layer, a P type GaAlAs layer, and a P type GaAs layer are sequentially laminated on an N type GaAs substrate, P is doped on the active layer, and the lattice constant is matched with the adjacent layer. According to this configuration, there can be obtained a visible light region can provide an element for executing a laser oscillation, and when the active layer is reduced in thickness, no crystal defect occur at the time of growing, and no lattice distortion occur at room temperature. Accordingly, the element can be remarkably suppressed in deterioration.
JP11121479A 1979-08-30 1979-08-30 Semiconductor laser element Pending JPS5635489A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11121479A JPS5635489A (en) 1979-08-30 1979-08-30 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11121479A JPS5635489A (en) 1979-08-30 1979-08-30 Semiconductor laser element

Publications (1)

Publication Number Publication Date
JPS5635489A true JPS5635489A (en) 1981-04-08

Family

ID=14555408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11121479A Pending JPS5635489A (en) 1979-08-30 1979-08-30 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS5635489A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59209615A (en) * 1983-05-12 1984-11-28 Nitto Electric Ind Co Ltd Preparation of aromatic polysulfone hollow yarn like membrane
JPS60246812A (en) * 1984-05-18 1985-12-06 Daicel Chem Ind Ltd Hollow polysulfone based resin fiber
JPS636033A (en) * 1986-06-26 1988-01-12 Fuji Photo Film Co Ltd Microporous membrane composed of polysulfone
JPS63139930A (en) * 1986-12-02 1988-06-11 Fuji Photo Film Co Ltd Production of microporous membrane

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59209615A (en) * 1983-05-12 1984-11-28 Nitto Electric Ind Co Ltd Preparation of aromatic polysulfone hollow yarn like membrane
JPH0249769B2 (en) * 1983-05-12 1990-10-31 Nitto Denko Corp
JPS60246812A (en) * 1984-05-18 1985-12-06 Daicel Chem Ind Ltd Hollow polysulfone based resin fiber
JPH0478729B2 (en) * 1984-05-18 1992-12-14 Daicel Chem
JPS636033A (en) * 1986-06-26 1988-01-12 Fuji Photo Film Co Ltd Microporous membrane composed of polysulfone
JPS63139930A (en) * 1986-12-02 1988-06-11 Fuji Photo Film Co Ltd Production of microporous membrane

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