JPS5789481A - Etching method for thin ni film - Google Patents

Etching method for thin ni film

Info

Publication number
JPS5789481A
JPS5789481A JP55166285A JP16628580A JPS5789481A JP S5789481 A JPS5789481 A JP S5789481A JP 55166285 A JP55166285 A JP 55166285A JP 16628580 A JP16628580 A JP 16628580A JP S5789481 A JPS5789481 A JP S5789481A
Authority
JP
Japan
Prior art keywords
thin
film
solution
parts
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55166285A
Other languages
Japanese (ja)
Other versions
JPS6058795B2 (en
Inventor
Takaaki Horiyama
Hiroshi Kishishita
Hideo Tokubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP55166285A priority Critical patent/JPS6058795B2/en
Publication of JPS5789481A publication Critical patent/JPS5789481A/en
Publication of JPS6058795B2 publication Critical patent/JPS6058795B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/28—Acidic compositions for etching iron group metals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

PURPOSE:To selectively etch a thin Ni film, by using a solution containing specified amounts of HNO3 and H2O2 as an etching solution for a back electrode comprising the laminate of Ni and Al layers in a thin film EL display device. CONSTITUTION:Parts 1, 4 at which electrode pattern-forming Ni and Al layers are evaporated in duplicate, are formed on the lead-connecting Al terminals of the stripped back electrode 1 of a thin film EL display device. The thin Ni film is selectively etched. In this case, a water solution containing 10-30% of HNO3 and 10-20% of H2O2 is used as an etchant. The thin Ni, Al double-layer coated parts 1, 4 are dipped in the solution. When the upper thin Ni layer only is rapidly removed by etching, the parts 1, 4 are taken out from the etching solution and then washed with water. The etching solution, being acidic, strongly acts on Ni, so that the thin Ni layer can be selectively etched without generation of any public pollution. Moreover, treatment for the waste solution can be easily performed.
JP55166285A 1980-11-25 1980-11-25 Ni thin film etching method Expired JPS6058795B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55166285A JPS6058795B2 (en) 1980-11-25 1980-11-25 Ni thin film etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55166285A JPS6058795B2 (en) 1980-11-25 1980-11-25 Ni thin film etching method

Publications (2)

Publication Number Publication Date
JPS5789481A true JPS5789481A (en) 1982-06-03
JPS6058795B2 JPS6058795B2 (en) 1985-12-21

Family

ID=15828521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55166285A Expired JPS6058795B2 (en) 1980-11-25 1980-11-25 Ni thin film etching method

Country Status (1)

Country Link
JP (1) JPS6058795B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8652972B2 (en) 2005-08-12 2014-02-18 Basf Aktiengesellschaft Stabilized etching solutions for CU and CU/NI layers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8652972B2 (en) 2005-08-12 2014-02-18 Basf Aktiengesellschaft Stabilized etching solutions for CU and CU/NI layers

Also Published As

Publication number Publication date
JPS6058795B2 (en) 1985-12-21

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