JPS5750478A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5750478A
JPS5750478A JP12669780A JP12669780A JPS5750478A JP S5750478 A JPS5750478 A JP S5750478A JP 12669780 A JP12669780 A JP 12669780A JP 12669780 A JP12669780 A JP 12669780A JP S5750478 A JPS5750478 A JP S5750478A
Authority
JP
Japan
Prior art keywords
photoresist
etched
mask
gate
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12669780A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6239834B2 (US20090163788A1-20090625-C00002.png
Inventor
Hirobumi Mizuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12669780A priority Critical patent/JPS5750478A/ja
Publication of JPS5750478A publication Critical patent/JPS5750478A/ja
Publication of JPS6239834B2 publication Critical patent/JPS6239834B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP12669780A 1980-09-12 1980-09-12 Manufacture of semiconductor device Granted JPS5750478A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12669780A JPS5750478A (en) 1980-09-12 1980-09-12 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12669780A JPS5750478A (en) 1980-09-12 1980-09-12 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5750478A true JPS5750478A (en) 1982-03-24
JPS6239834B2 JPS6239834B2 (US20090163788A1-20090625-C00002.png) 1987-08-25

Family

ID=14941602

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12669780A Granted JPS5750478A (en) 1980-09-12 1980-09-12 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5750478A (US20090163788A1-20090625-C00002.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60263479A (ja) * 1984-06-12 1985-12-26 Nec Corp 半導体装置の製造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6248437U (US20090163788A1-20090625-C00002.png) * 1985-09-10 1987-03-25
JPH03115044U (US20090163788A1-20090625-C00002.png) * 1990-03-09 1991-11-27

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51151571U (US20090163788A1-20090625-C00002.png) * 1975-05-27 1976-12-03
JPS52109375A (en) * 1976-03-10 1977-09-13 Nec Corp Manufacture of junction gate type field effect transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51151571U (US20090163788A1-20090625-C00002.png) * 1975-05-27 1976-12-03
JPS52109375A (en) * 1976-03-10 1977-09-13 Nec Corp Manufacture of junction gate type field effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60263479A (ja) * 1984-06-12 1985-12-26 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6239834B2 (US20090163788A1-20090625-C00002.png) 1987-08-25

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