JPS5748249A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5748249A JPS5748249A JP12432580A JP12432580A JPS5748249A JP S5748249 A JPS5748249 A JP S5748249A JP 12432580 A JP12432580 A JP 12432580A JP 12432580 A JP12432580 A JP 12432580A JP S5748249 A JPS5748249 A JP S5748249A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- silicon oxide
- titanium nitride
- employing
- thermally stable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12432580A JPS5748249A (en) | 1980-09-08 | 1980-09-08 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12432580A JPS5748249A (en) | 1980-09-08 | 1980-09-08 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5748249A true JPS5748249A (en) | 1982-03-19 |
Family
ID=14882538
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12432580A Pending JPS5748249A (en) | 1980-09-08 | 1980-09-08 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5748249A (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61183942A (ja) * | 1985-02-08 | 1986-08-16 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS63198357A (ja) * | 1987-02-13 | 1988-08-17 | Nec Corp | 半導体装置 |
JPS6451121A (en) * | 1987-08-21 | 1989-02-27 | Seitetsu Kagaku Co Ltd | Separating method for gas |
JPH021922A (ja) * | 1988-06-10 | 1990-01-08 | Nec Corp | 半導体装置の製造方法 |
JPH05198789A (ja) * | 1992-11-20 | 1993-08-06 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPH05343406A (ja) * | 1985-09-11 | 1993-12-24 | Mitsubishi Electric Corp | 半導体装置 |
US5278099A (en) * | 1985-05-13 | 1994-01-11 | Kabushiki Kaisha Toshiba | Method for manufacturing a semiconductor device having wiring electrodes |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5271174A (en) * | 1975-12-10 | 1977-06-14 | Fujitsu Ltd | Production of semiconductor device |
JPS5365088A (en) * | 1976-11-22 | 1978-06-10 | Nec Corp | Semiconductor device |
-
1980
- 1980-09-08 JP JP12432580A patent/JPS5748249A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5271174A (en) * | 1975-12-10 | 1977-06-14 | Fujitsu Ltd | Production of semiconductor device |
JPS5365088A (en) * | 1976-11-22 | 1978-06-10 | Nec Corp | Semiconductor device |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61183942A (ja) * | 1985-02-08 | 1986-08-16 | Fujitsu Ltd | 半導体装置の製造方法 |
US5278099A (en) * | 1985-05-13 | 1994-01-11 | Kabushiki Kaisha Toshiba | Method for manufacturing a semiconductor device having wiring electrodes |
JPH05343406A (ja) * | 1985-09-11 | 1993-12-24 | Mitsubishi Electric Corp | 半導体装置 |
JPS63198357A (ja) * | 1987-02-13 | 1988-08-17 | Nec Corp | 半導体装置 |
JPS6451121A (en) * | 1987-08-21 | 1989-02-27 | Seitetsu Kagaku Co Ltd | Separating method for gas |
JPH021922A (ja) * | 1988-06-10 | 1990-01-08 | Nec Corp | 半導体装置の製造方法 |
JPH0719779B2 (ja) * | 1988-06-10 | 1995-03-06 | 日本電気株式会社 | 半導体装置の製造方法 |
JPH05198789A (ja) * | 1992-11-20 | 1993-08-06 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5748249A (en) | Semiconductor device | |
JPS57100731A (en) | Manufacture of semiconductor device | |
JPS5331964A (en) | Production of semiconductor substrates | |
JPS57145340A (en) | Manufacture of semiconductor device | |
JPS5763842A (en) | Preparation of semiconductor integrated circuit | |
JPS55138859A (en) | Multilayer wiring type semiconductor device | |
JPS5691430A (en) | Preparation of semiconductor device | |
JPS54161285A (en) | Manufacture of semiconductor device | |
JPS56114355A (en) | Manufacture of semiconductor device | |
JPS5349964A (en) | Manufacture of semiconductor device | |
JPS5660033A (en) | Manufacture of semiconductor device | |
JPS5732654A (en) | Semiconductor integrated circuit device | |
JPS6484735A (en) | Manufacture of semiconductor device | |
JPS56160052A (en) | Semiconductor device | |
JPS5317286A (en) | Production of semiconductor device | |
JPS5732653A (en) | Manufacture of semiconductor device | |
JPS55117257A (en) | Fabrication of semiconductor device | |
JPS53105973A (en) | Manufacture of semiconductor device | |
JPS52113161A (en) | Semiconductor device | |
JPS5468179A (en) | Forming method of wiring layer having minute interval | |
JPS56162852A (en) | Semiconductor device and manufacture thereof | |
JPS5797643A (en) | Manufacture of semiconductor device | |
JPS57181124A (en) | Manufacture of semiconductor device | |
JPS6439750A (en) | Manufacture of semiconductor device | |
JPS5578547A (en) | Manufacture of semiconductor |