JPS6439750A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6439750A
JPS6439750A JP19690387A JP19690387A JPS6439750A JP S6439750 A JPS6439750 A JP S6439750A JP 19690387 A JP19690387 A JP 19690387A JP 19690387 A JP19690387 A JP 19690387A JP S6439750 A JPS6439750 A JP S6439750A
Authority
JP
Japan
Prior art keywords
insulating film
photoresist
film
hole
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19690387A
Other languages
Japanese (ja)
Inventor
Seiji Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP19690387A priority Critical patent/JPS6439750A/en
Publication of JPS6439750A publication Critical patent/JPS6439750A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent a resist from peeling and a resist pattern configuration from deteriorating in manufacturing a through hole, by applying an undoped silicon coating to the whole surface of a second insulating film and then applying a photoresist thereon. CONSTITUTION:A first insulating film 14 formed of a silicon oxide film or a silicon nitride film is formed so as to cover a wiring pattern 13. Then, liquid phase oxide film is applied and baked, and a second insulating film 15 is applied to form an interlayer insulating film. Then, a undoped silicon coating 16 is formed on the whole surface of the second insulating film 15. A photoresist is applied by spin-on operation thereon and then exposed to light and developed to form a through hole pattern of a photoresist film 17. Since the above- described silicon coating 16 has the property of intercepting light, it is possible to prevent deterioration of the through hole configuration of the photoresist layer 17 due to the reflection of the exposed light on the surface of the wiring pattern layer 17. In addition, since the coating 16 adheres to the second insulating film 15 and the photoresist layer 17 strongly, it is possible to strongth adhere the photoresist layer 17 to the interlayer insulating film.
JP19690387A 1987-08-06 1987-08-06 Manufacture of semiconductor device Pending JPS6439750A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19690387A JPS6439750A (en) 1987-08-06 1987-08-06 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19690387A JPS6439750A (en) 1987-08-06 1987-08-06 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6439750A true JPS6439750A (en) 1989-02-10

Family

ID=16365563

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19690387A Pending JPS6439750A (en) 1987-08-06 1987-08-06 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6439750A (en)

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