JPS5746669B2 - - Google Patents

Info

Publication number
JPS5746669B2
JPS5746669B2 JP8221478A JP8221478A JPS5746669B2 JP S5746669 B2 JPS5746669 B2 JP S5746669B2 JP 8221478 A JP8221478 A JP 8221478A JP 8221478 A JP8221478 A JP 8221478A JP S5746669 B2 JPS5746669 B2 JP S5746669B2
Authority
JP
Japan
Prior art keywords
layer
thin film
light emission
wafer
solder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8221478A
Other languages
English (en)
Japanese (ja)
Other versions
JPS559442A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8221478A priority Critical patent/JPS559442A/ja
Publication of JPS559442A publication Critical patent/JPS559442A/ja
Publication of JPS5746669B2 publication Critical patent/JPS5746669B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/06102—Disposition the bonding areas being at different heights
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP8221478A 1978-07-05 1978-07-05 Light emission element and its manufacturing method Granted JPS559442A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8221478A JPS559442A (en) 1978-07-05 1978-07-05 Light emission element and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8221478A JPS559442A (en) 1978-07-05 1978-07-05 Light emission element and its manufacturing method

Publications (2)

Publication Number Publication Date
JPS559442A JPS559442A (en) 1980-01-23
JPS5746669B2 true JPS5746669B2 (enrdf_load_stackoverflow) 1982-10-05

Family

ID=13768160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8221478A Granted JPS559442A (en) 1978-07-05 1978-07-05 Light emission element and its manufacturing method

Country Status (1)

Country Link
JP (1) JPS559442A (enrdf_load_stackoverflow)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04103666U (ja) * 1991-02-18 1992-09-07 日亜化学工業株式会社 青色発光デバイスの電極
JP2666228B2 (ja) * 1991-10-30 1997-10-22 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子
JP2522952Y2 (ja) * 1992-01-13 1997-01-22 日亜化学工業株式会社 窒化ガリウム系化合物半導体素子
DE69333250T2 (de) * 1992-07-23 2004-09-16 Toyoda Gosei Co., Ltd. Lichtemittierende Vorrichtung aus einer Verbindung der Galliumnitridgruppe
JP2783349B2 (ja) * 1993-07-28 1998-08-06 日亜化学工業株式会社 ｎ型窒化ガリウム系化合物半導体層の電極及びその形成方法
EP0622858B2 (en) 1993-04-28 2004-09-29 Nichia Corporation Gallium nitride-based III-V group compound semiconductor device and method of producing the same
JP2706660B2 (ja) * 1996-01-26 1998-01-28 豊田合成株式会社 窒化ガリウム系化合物半導体の電極形成方法
JP2661009B2 (ja) * 1996-05-16 1997-10-08 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子
JP3292044B2 (ja) * 1996-05-31 2002-06-17 豊田合成株式会社 ｐ伝導形３族窒化物半導体の電極パッド及びそれを有した素子及び素子の製造方法
JP3239774B2 (ja) * 1996-09-20 2001-12-17 豊田合成株式会社 ３族窒化物半導体発光素子の基板分離方法
JP4897133B2 (ja) 1999-12-09 2012-03-14 ソニー株式会社 半導体発光素子、その製造方法および配設基板
US6888167B2 (en) * 2001-07-23 2005-05-03 Cree, Inc. Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
JP2004343139A (ja) * 2001-11-19 2004-12-02 Sanyo Electric Co Ltd 化合物半導体発光素子
WO2003044872A1 (fr) * 2001-11-19 2003-05-30 Sanyo Electric Co., Ltd. Dispositif electroluminescent semi-conducteur compose et son procede de fabrication
JP2005005727A (ja) * 2001-11-19 2005-01-06 Sanyo Electric Co Ltd 化合物半導体発光素子
JP4735794B2 (ja) * 2003-06-30 2011-07-27 信越半導体株式会社 発光モジュール
JP4686967B2 (ja) * 2003-10-14 2011-05-25 セイコーエプソン株式会社 光素子の製造方法
GB2412234A (en) * 2004-03-18 2005-09-21 Sharp Kk Manufacture of a semiconductor light-emitting device

Also Published As

Publication number Publication date
JPS559442A (en) 1980-01-23

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