JPS559442A - Light emission element and its manufacturing method - Google Patents

Light emission element and its manufacturing method

Info

Publication number
JPS559442A
JPS559442A JP8221478A JP8221478A JPS559442A JP S559442 A JPS559442 A JP S559442A JP 8221478 A JP8221478 A JP 8221478A JP 8221478 A JP8221478 A JP 8221478A JP S559442 A JPS559442 A JP S559442A
Authority
JP
Japan
Prior art keywords
layer
light emission
thin film
wafer
solder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8221478A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5746669B2 (enrdf_load_stackoverflow
Inventor
Masafumi Hashimoto
Atsuyuki Kobayashi
Yukio Toyoda
Yoshimasa Oki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8221478A priority Critical patent/JPS559442A/ja
Publication of JPS559442A publication Critical patent/JPS559442A/ja
Publication of JPS5746669B2 publication Critical patent/JPS5746669B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/06102—Disposition the bonding areas being at different heights
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP8221478A 1978-07-05 1978-07-05 Light emission element and its manufacturing method Granted JPS559442A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8221478A JPS559442A (en) 1978-07-05 1978-07-05 Light emission element and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8221478A JPS559442A (en) 1978-07-05 1978-07-05 Light emission element and its manufacturing method

Publications (2)

Publication Number Publication Date
JPS559442A true JPS559442A (en) 1980-01-23
JPS5746669B2 JPS5746669B2 (enrdf_load_stackoverflow) 1982-10-05

Family

ID=13768160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8221478A Granted JPS559442A (en) 1978-07-05 1978-07-05 Light emission element and its manufacturing method

Country Status (1)

Country Link
JP (1) JPS559442A (enrdf_load_stackoverflow)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04103666U (ja) * 1991-02-18 1992-09-07 日亜化学工業株式会社 青色発光デバイスの電極
JPH05129658A (ja) * 1991-10-30 1993-05-25 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体発光素子
JPH0559861U (ja) * 1992-01-13 1993-08-06 日亜化学工業株式会社 窒化ガリウム系化合物半導体素子
JPH0745867A (ja) * 1993-07-28 1995-02-14 Nichia Chem Ind Ltd ｎ型窒化ガリウム系化合物半導体層の電極
JPH08274081A (ja) * 1996-01-26 1996-10-18 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体のエッチング及び電極形成方法
JPH08316529A (ja) * 1996-05-16 1996-11-29 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体発光素子
US6033927A (en) * 1996-09-20 2000-03-07 Toyoda Gosei Co., Ltd. Method for separating a substrate of a group III nitride semiconductor light-emitting device
US6507041B2 (en) 1993-04-28 2003-01-14 Nichia Chemical Industries, Ltd. Gallium nitride-based III-V group compound semiconductor
WO2003010833A3 (en) * 2001-07-23 2004-03-11 Cree Inc Flip chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
US6734468B2 (en) * 1996-05-31 2004-05-11 Toyoda Gosei Co., Ltd. Devices related to electrode pads for p-type group III nitride compound semiconductors
US6761303B2 (en) * 1999-12-09 2004-07-13 Sony Corporation Semiconductor light-emitting device and method of manufacturing the same and mounting plate
JP2004343139A (ja) * 2001-11-19 2004-12-02 Sanyo Electric Co Ltd 化合物半導体発光素子
JP2005005727A (ja) * 2001-11-19 2005-01-06 Sanyo Electric Co Ltd 化合物半導体発光素子
JP2005026303A (ja) * 2003-06-30 2005-01-27 Shin Etsu Handotai Co Ltd 発光モジュール
JPWO2003044872A1 (ja) * 2001-11-19 2005-03-24 三洋電機株式会社 化合物半導体発光素子
EP1313153A3 (en) * 1992-07-23 2005-05-04 Toyoda Gosei Co., Ltd. Light-emitting device of gallium nitride compound semiconductor
JP2005123268A (ja) * 2003-10-14 2005-05-12 Seiko Epson Corp 光素子およびその製造方法、光素子と実装基板との実装構造、光素子と実装基板との実装方法、光モジュール、ならびに光伝達装置
GB2412234A (en) * 2004-03-18 2005-09-21 Sharp Kk Manufacture of a semiconductor light-emitting device

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04103666U (ja) * 1991-02-18 1992-09-07 日亜化学工業株式会社 青色発光デバイスの電極
JPH05129658A (ja) * 1991-10-30 1993-05-25 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体発光素子
JPH0559861U (ja) * 1992-01-13 1993-08-06 日亜化学工業株式会社 窒化ガリウム系化合物半導体素子
EP1313153A3 (en) * 1992-07-23 2005-05-04 Toyoda Gosei Co., Ltd. Light-emitting device of gallium nitride compound semiconductor
US6998690B2 (en) 1993-04-28 2006-02-14 Nichia Corporation Gallium nitride based III-V group compound semiconductor device and method of producing the same
US6507041B2 (en) 1993-04-28 2003-01-14 Nichia Chemical Industries, Ltd. Gallium nitride-based III-V group compound semiconductor
US6610995B2 (en) 1993-04-28 2003-08-26 Nichia Corporation Gallium nitride-based III-V group compound semiconductor
US7205220B2 (en) 1993-04-28 2007-04-17 Nichia Corporation Gallium nitride based III-V group compound semiconductor device and method of producing the same
US7375383B2 (en) 1993-04-28 2008-05-20 Nichia Corporation Gallium nitride based III-V group compound semiconductor device and method of producing the same
JPH0745867A (ja) * 1993-07-28 1995-02-14 Nichia Chem Ind Ltd ｎ型窒化ガリウム系化合物半導体層の電極
JPH08274081A (ja) * 1996-01-26 1996-10-18 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体のエッチング及び電極形成方法
JPH08316529A (ja) * 1996-05-16 1996-11-29 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体発光素子
US6734468B2 (en) * 1996-05-31 2004-05-11 Toyoda Gosei Co., Ltd. Devices related to electrode pads for p-type group III nitride compound semiconductors
US6033927A (en) * 1996-09-20 2000-03-07 Toyoda Gosei Co., Ltd. Method for separating a substrate of a group III nitride semiconductor light-emitting device
US6761303B2 (en) * 1999-12-09 2004-07-13 Sony Corporation Semiconductor light-emitting device and method of manufacturing the same and mounting plate
US7078730B2 (en) 1999-12-09 2006-07-18 Sony Corporation Semiconductor light-emitting device and method of manufacturing the same and mounting plate
WO2003010833A3 (en) * 2001-07-23 2004-03-11 Cree Inc Flip chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
US6888167B2 (en) 2001-07-23 2005-05-03 Cree, Inc. Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
US7259033B2 (en) 2001-07-23 2007-08-21 Cree, Inc. Flip-chip bonding of light emitting devices
CN100392874C (zh) * 2001-07-23 2008-06-04 克里公司 发光器件的倒装结合和适用于倒装结合的发光器件
US7608860B2 (en) 2001-07-23 2009-10-27 Cree, Inc. Light emitting devices suitable for flip-chip bonding
JPWO2003044872A1 (ja) * 2001-11-19 2005-03-24 三洋電機株式会社 化合物半導体発光素子
JP2005005727A (ja) * 2001-11-19 2005-01-06 Sanyo Electric Co Ltd 化合物半導体発光素子
JP2004343139A (ja) * 2001-11-19 2004-12-02 Sanyo Electric Co Ltd 化合物半導体発光素子
JP2005026303A (ja) * 2003-06-30 2005-01-27 Shin Etsu Handotai Co Ltd 発光モジュール
JP2005123268A (ja) * 2003-10-14 2005-05-12 Seiko Epson Corp 光素子およびその製造方法、光素子と実装基板との実装構造、光素子と実装基板との実装方法、光モジュール、ならびに光伝達装置
JP2005268800A (ja) * 2004-03-18 2005-09-29 Sharp Corp 半導体発光デバイス製造
GB2412234A (en) * 2004-03-18 2005-09-21 Sharp Kk Manufacture of a semiconductor light-emitting device

Also Published As

Publication number Publication date
JPS5746669B2 (enrdf_load_stackoverflow) 1982-10-05

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