JPS5743456A - Manufacture of cmos integrated circuit - Google Patents

Manufacture of cmos integrated circuit

Info

Publication number
JPS5743456A
JPS5743456A JP55119323A JP11932380A JPS5743456A JP S5743456 A JPS5743456 A JP S5743456A JP 55119323 A JP55119323 A JP 55119323A JP 11932380 A JP11932380 A JP 11932380A JP S5743456 A JPS5743456 A JP S5743456A
Authority
JP
Japan
Prior art keywords
photoresist
steps
ions
channel mosfet
injected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55119323A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6360546B2 (enrdf_load_stackoverflow
Inventor
Katsuyuki Inayoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55119323A priority Critical patent/JPS5743456A/ja
Publication of JPS5743456A publication Critical patent/JPS5743456A/ja
Publication of JPS6360546B2 publication Critical patent/JPS6360546B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP55119323A 1980-08-29 1980-08-29 Manufacture of cmos integrated circuit Granted JPS5743456A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55119323A JPS5743456A (en) 1980-08-29 1980-08-29 Manufacture of cmos integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55119323A JPS5743456A (en) 1980-08-29 1980-08-29 Manufacture of cmos integrated circuit

Publications (2)

Publication Number Publication Date
JPS5743456A true JPS5743456A (en) 1982-03-11
JPS6360546B2 JPS6360546B2 (enrdf_load_stackoverflow) 1988-11-24

Family

ID=14758611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55119323A Granted JPS5743456A (en) 1980-08-29 1980-08-29 Manufacture of cmos integrated circuit

Country Status (1)

Country Link
JP (1) JPS5743456A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62149163A (ja) * 1985-08-30 1987-07-03 Nec Corp 相補型ｍｏｓ集積回路の製造方法
JPH06310528A (ja) * 1993-12-24 1994-11-04 Toshiba Corp マスクｌｄｄ構造のｍｏｓ型半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62149163A (ja) * 1985-08-30 1987-07-03 Nec Corp 相補型ｍｏｓ集積回路の製造方法
JPH06310528A (ja) * 1993-12-24 1994-11-04 Toshiba Corp マスクｌｄｄ構造のｍｏｓ型半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6360546B2 (enrdf_load_stackoverflow) 1988-11-24

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