JPS6360546B2 - - Google Patents

Info

Publication number
JPS6360546B2
JPS6360546B2 JP55119323A JP11932380A JPS6360546B2 JP S6360546 B2 JPS6360546 B2 JP S6360546B2 JP 55119323 A JP55119323 A JP 55119323A JP 11932380 A JP11932380 A JP 11932380A JP S6360546 B2 JPS6360546 B2 JP S6360546B2
Authority
JP
Japan
Prior art keywords
region
transistor region
conductivity type
transistor
ion implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55119323A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5743456A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP55119323A priority Critical patent/JPS5743456A/ja
Publication of JPS5743456A publication Critical patent/JPS5743456A/ja
Publication of JPS6360546B2 publication Critical patent/JPS6360546B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP55119323A 1980-08-29 1980-08-29 Manufacture of cmos integrated circuit Granted JPS5743456A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55119323A JPS5743456A (en) 1980-08-29 1980-08-29 Manufacture of cmos integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55119323A JPS5743456A (en) 1980-08-29 1980-08-29 Manufacture of cmos integrated circuit

Publications (2)

Publication Number Publication Date
JPS5743456A JPS5743456A (en) 1982-03-11
JPS6360546B2 true JPS6360546B2 (enrdf_load_stackoverflow) 1988-11-24

Family

ID=14758611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55119323A Granted JPS5743456A (en) 1980-08-29 1980-08-29 Manufacture of cmos integrated circuit

Country Status (1)

Country Link
JP (1) JPS5743456A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62149163A (ja) * 1985-08-30 1987-07-03 Nec Corp 相補型ｍｏｓ集積回路の製造方法
JP2653632B2 (ja) * 1993-12-24 1997-09-17 株式会社東芝 マスクｌｄｄ構造のｍｏｓ型半導体装置の製造方法

Also Published As

Publication number Publication date
JPS5743456A (en) 1982-03-11

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