JPS574165A - Mos semiconductor device - Google Patents
Mos semiconductor deviceInfo
- Publication number
- JPS574165A JPS574165A JP7817380A JP7817380A JPS574165A JP S574165 A JPS574165 A JP S574165A JP 7817380 A JP7817380 A JP 7817380A JP 7817380 A JP7817380 A JP 7817380A JP S574165 A JPS574165 A JP S574165A
- Authority
- JP
- Japan
- Prior art keywords
- bent
- region
- sections
- bent sections
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000012535 impurity Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To decrease the capacity of a gate electrode to a semiconductor substrate by making the thickness of an oxide film just under a bent section of the gate electrode thicker than the thickness of the oxide film just under a section except the bent section. CONSTITUTION:An N conductive type impurity diffusion layer is formed to the semiconductor substrate 100 so that a P conductive type impurity region 100a remains in meandering arrangement. The impurity diffusion layer constitutes a source 101 and a drain 102, holding the remaining region 100a. The oxide films 104 are made up at the bent sections 103 of the region 100a arranged meanderinly. The gate electrodes 106 are laminated on the region 100a and the bent sections 103 through gate oxide films 105. The films 105 are also set to thickness larger than other sections except the bent sections 103 at the bent sections 103. Accordingly, only capacity to the substrate 100 at the bent sections 103 can be decreased without substantially changing the width of a gate channel. Thus, the operation of a transistor at high speed can be attained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7817380A JPS574165A (en) | 1980-06-10 | 1980-06-10 | Mos semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7817380A JPS574165A (en) | 1980-06-10 | 1980-06-10 | Mos semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS574165A true JPS574165A (en) | 1982-01-09 |
Family
ID=13654554
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7817380A Pending JPS574165A (en) | 1980-06-10 | 1980-06-10 | Mos semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS574165A (en) |
-
1980
- 1980-06-10 JP JP7817380A patent/JPS574165A/en active Pending
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