JPS5741640A - Photomask and its production, and pattern transfer method using said photomask - Google Patents
Photomask and its production, and pattern transfer method using said photomaskInfo
- Publication number
- JPS5741640A JPS5741640A JP11731180A JP11731180A JPS5741640A JP S5741640 A JPS5741640 A JP S5741640A JP 11731180 A JP11731180 A JP 11731180A JP 11731180 A JP11731180 A JP 11731180A JP S5741640 A JPS5741640 A JP S5741640A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- photomask
- film
- thicknesses
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title 1
- 239000010408 film Substances 0.000 abstract 5
- 238000010894 electron beam technology Methods 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 230000001678 irradiating effect Effects 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
- G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11731180A JPS5741640A (en) | 1980-08-26 | 1980-08-26 | Photomask and its production, and pattern transfer method using said photomask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11731180A JPS5741640A (en) | 1980-08-26 | 1980-08-26 | Photomask and its production, and pattern transfer method using said photomask |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5741640A true JPS5741640A (en) | 1982-03-08 |
JPS627536B2 JPS627536B2 (enrdf_load_stackoverflow) | 1987-02-18 |
Family
ID=14708603
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11731180A Granted JPS5741640A (en) | 1980-08-26 | 1980-08-26 | Photomask and its production, and pattern transfer method using said photomask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5741640A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2589593A1 (fr) * | 1985-08-09 | 1987-05-07 | Pichot Michel | Masque de lithographie, procede de fabrication de ce masque et procede de fabrication d'un circuit integre a l'aide dudit masque |
FR2606210A1 (fr) * | 1986-10-30 | 1988-05-06 | Devine Roderick | Procede de fabrication d'un masque de photolithogravure et masque obtenu |
-
1980
- 1980-08-26 JP JP11731180A patent/JPS5741640A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2589593A1 (fr) * | 1985-08-09 | 1987-05-07 | Pichot Michel | Masque de lithographie, procede de fabrication de ce masque et procede de fabrication d'un circuit integre a l'aide dudit masque |
FR2606210A1 (fr) * | 1986-10-30 | 1988-05-06 | Devine Roderick | Procede de fabrication d'un masque de photolithogravure et masque obtenu |
Also Published As
Publication number | Publication date |
---|---|
JPS627536B2 (enrdf_load_stackoverflow) | 1987-02-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS57104141A (en) | Photomask and photomask substrate | |
JPS5741640A (en) | Photomask and its production, and pattern transfer method using said photomask | |
JPS5785237A (en) | X-ray mask | |
JPS5742043A (en) | Photosensitive material | |
JPS5680133A (en) | Formation of pattern | |
JPS5680130A (en) | Manufacture of semiconductor device | |
JPS56144536A (en) | Pattern formation and p-n junction formation | |
JPS5224084A (en) | Semiconductor manufacturing rpocess | |
JPS5568634A (en) | Manufacture of mask for x-ray exposure | |
JPS5596952A (en) | Production of photomask | |
JPS5799371A (en) | Formation of resin film | |
JPS5687343A (en) | Forming method of wiring | |
JPS55135837A (en) | Manufacture of photomask | |
JPS57109331A (en) | Formation of resist pattern | |
JPS5317076A (en) | Silicon mask for x-ray exposure and its production | |
JPS56107241A (en) | Dry etching method | |
JPS5741637A (en) | Microstep tablet | |
JPS5635137A (en) | Photomask | |
JPS5646230A (en) | Exposing method | |
JPS56130750A (en) | Manufacture of mask | |
JPS56110232A (en) | Pattern formation with soft x-ray | |
JPS5656630A (en) | Manufacture of semiconductor element | |
JPS5632143A (en) | Manufacture of photomask | |
JPS5763829A (en) | Pattern forming method | |
JPS56158334A (en) | Manufacture of hard mask |