JPS574151A - Mos integrated circuit device - Google Patents

Mos integrated circuit device

Info

Publication number
JPS574151A
JPS574151A JP7773680A JP7773680A JPS574151A JP S574151 A JPS574151 A JP S574151A JP 7773680 A JP7773680 A JP 7773680A JP 7773680 A JP7773680 A JP 7773680A JP S574151 A JPS574151 A JP S574151A
Authority
JP
Japan
Prior art keywords
voltage
junction
area
yield
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7773680A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6360547B2 (enrdf_load_stackoverflow
Inventor
Riichi Uetsuki
Toshiharu Ishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7773680A priority Critical patent/JPS574151A/ja
Publication of JPS574151A publication Critical patent/JPS574151A/ja
Publication of JPS6360547B2 publication Critical patent/JPS6360547B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP7773680A 1980-06-11 1980-06-11 Mos integrated circuit device Granted JPS574151A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7773680A JPS574151A (en) 1980-06-11 1980-06-11 Mos integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7773680A JPS574151A (en) 1980-06-11 1980-06-11 Mos integrated circuit device

Publications (2)

Publication Number Publication Date
JPS574151A true JPS574151A (en) 1982-01-09
JPS6360547B2 JPS6360547B2 (enrdf_load_stackoverflow) 1988-11-24

Family

ID=13642186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7773680A Granted JPS574151A (en) 1980-06-11 1980-06-11 Mos integrated circuit device

Country Status (1)

Country Link
JP (1) JPS574151A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58159363A (ja) * 1982-03-17 1983-09-21 Nec Corp 半導体集積回路の入出力保護装置
JPS5969957A (ja) * 1982-10-15 1984-04-20 Nec Corp 出力保護装置
JPS59191371A (ja) * 1983-04-14 1984-10-30 Nec Corp 相補型ｍｏｓ電界効果装置
JPS6010767A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd 半導体装置
JPH02369A (ja) * 1987-11-24 1990-01-05 Nec Corp 半導体装置
JP2009099679A (ja) * 2007-10-15 2009-05-07 Mitsumi Electric Co Ltd Ｍｏｓトランジスタ及びこれを用いた半導体集積回路装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132065A (en) * 1979-04-02 1980-10-14 Sharp Corp Cmos circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132065A (en) * 1979-04-02 1980-10-14 Sharp Corp Cmos circuit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58159363A (ja) * 1982-03-17 1983-09-21 Nec Corp 半導体集積回路の入出力保護装置
JPS5969957A (ja) * 1982-10-15 1984-04-20 Nec Corp 出力保護装置
JPS59191371A (ja) * 1983-04-14 1984-10-30 Nec Corp 相補型ｍｏｓ電界効果装置
JPS6010767A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd 半導体装置
JPH02369A (ja) * 1987-11-24 1990-01-05 Nec Corp 半導体装置
JP2009099679A (ja) * 2007-10-15 2009-05-07 Mitsumi Electric Co Ltd Ｍｏｓトランジスタ及びこれを用いた半導体集積回路装置

Also Published As

Publication number Publication date
JPS6360547B2 (enrdf_load_stackoverflow) 1988-11-24

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