JPS6360547B2 - - Google Patents

Info

Publication number
JPS6360547B2
JPS6360547B2 JP55077736A JP7773680A JPS6360547B2 JP S6360547 B2 JPS6360547 B2 JP S6360547B2 JP 55077736 A JP55077736 A JP 55077736A JP 7773680 A JP7773680 A JP 7773680A JP S6360547 B2 JPS6360547 B2 JP S6360547B2
Authority
JP
Japan
Prior art keywords
mos
fet
type
breakdown voltage
impurity concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55077736A
Other languages
English (en)
Japanese (ja)
Other versions
JPS574151A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7773680A priority Critical patent/JPS574151A/ja
Publication of JPS574151A publication Critical patent/JPS574151A/ja
Publication of JPS6360547B2 publication Critical patent/JPS6360547B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP7773680A 1980-06-11 1980-06-11 Mos integrated circuit device Granted JPS574151A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7773680A JPS574151A (en) 1980-06-11 1980-06-11 Mos integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7773680A JPS574151A (en) 1980-06-11 1980-06-11 Mos integrated circuit device

Publications (2)

Publication Number Publication Date
JPS574151A JPS574151A (en) 1982-01-09
JPS6360547B2 true JPS6360547B2 (enrdf_load_stackoverflow) 1988-11-24

Family

ID=13642186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7773680A Granted JPS574151A (en) 1980-06-11 1980-06-11 Mos integrated circuit device

Country Status (1)

Country Link
JP (1) JPS574151A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58159363A (ja) * 1982-03-17 1983-09-21 Nec Corp 半導体集積回路の入出力保護装置
JPS5969957A (ja) * 1982-10-15 1984-04-20 Nec Corp 出力保護装置
JPS59191371A (ja) * 1983-04-14 1984-10-30 Nec Corp 相補型ｍｏｓ電界効果装置
JPS6010767A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd 半導体装置
JP2508826B2 (ja) * 1987-11-24 1996-06-19 日本電気株式会社 半導体装置
JP2009099679A (ja) * 2007-10-15 2009-05-07 Mitsumi Electric Co Ltd Ｍｏｓトランジスタ及びこれを用いた半導体集積回路装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132065A (en) * 1979-04-02 1980-10-14 Sharp Corp Cmos circuit

Also Published As

Publication number Publication date
JPS574151A (en) 1982-01-09

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