JPS5740957A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5740957A JPS5740957A JP11739380A JP11739380A JPS5740957A JP S5740957 A JPS5740957 A JP S5740957A JP 11739380 A JP11739380 A JP 11739380A JP 11739380 A JP11739380 A JP 11739380A JP S5740957 A JPS5740957 A JP S5740957A
- Authority
- JP
- Japan
- Prior art keywords
- wiring layer
- silicon
- film
- oxide film
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11739380A JPS5740957A (en) | 1980-08-26 | 1980-08-26 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11739380A JPS5740957A (en) | 1980-08-26 | 1980-08-26 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5740957A true JPS5740957A (en) | 1982-03-06 |
JPS623980B2 JPS623980B2 (enrdf_load_stackoverflow) | 1987-01-28 |
Family
ID=14710535
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11739380A Granted JPS5740957A (en) | 1980-08-26 | 1980-08-26 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5740957A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60240141A (ja) * | 1984-05-15 | 1985-11-29 | Nec Corp | 半導体装置の製造方法 |
-
1980
- 1980-08-26 JP JP11739380A patent/JPS5740957A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60240141A (ja) * | 1984-05-15 | 1985-11-29 | Nec Corp | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS623980B2 (enrdf_load_stackoverflow) | 1987-01-28 |
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