JPS5737883A - Compound semiconductor device - Google Patents

Compound semiconductor device

Info

Publication number
JPS5737883A
JPS5737883A JP11343780A JP11343780A JPS5737883A JP S5737883 A JPS5737883 A JP S5737883A JP 11343780 A JP11343780 A JP 11343780A JP 11343780 A JP11343780 A JP 11343780A JP S5737883 A JPS5737883 A JP S5737883A
Authority
JP
Japan
Prior art keywords
channel
layer
gate electrode
ohmic electrode
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11343780A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6314507B2 (enrdf_load_html_response
Inventor
Mikio Tatematsu
Kiyoo Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11343780A priority Critical patent/JPS5737883A/ja
Publication of JPS5737883A publication Critical patent/JPS5737883A/ja
Publication of JPS6314507B2 publication Critical patent/JPS6314507B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP11343780A 1980-08-20 1980-08-20 Compound semiconductor device Granted JPS5737883A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11343780A JPS5737883A (en) 1980-08-20 1980-08-20 Compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11343780A JPS5737883A (en) 1980-08-20 1980-08-20 Compound semiconductor device

Publications (2)

Publication Number Publication Date
JPS5737883A true JPS5737883A (en) 1982-03-02
JPS6314507B2 JPS6314507B2 (enrdf_load_html_response) 1988-03-31

Family

ID=14612194

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11343780A Granted JPS5737883A (en) 1980-08-20 1980-08-20 Compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS5737883A (enrdf_load_html_response)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5348487A (en) * 1976-10-14 1978-05-01 Fujitsu Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5348487A (en) * 1976-10-14 1978-05-01 Fujitsu Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS6314507B2 (enrdf_load_html_response) 1988-03-31

Similar Documents

Publication Publication Date Title
JPS57141962A (en) Semiconductor integrated circuit device
GB1466901A (en) Overvoltage protection circuit
GB1309049A (en) Integrated circuit with a protective input circuit
GB1357553A (en) Insulated-gate field effect transistors
EP0249371A3 (en) Semiconductor device including two compound semiconductors, and method of manufacturing such a device
KR850005165A (ko) 반도체 장치
JPS5737883A (en) Compound semiconductor device
JPS5793579A (en) Compound semiconductor device
JPS648674A (en) Vertical mos-fet
JPS56165356A (en) Mos semiconductor device
JPS5768078A (en) Normally off type field effect transistor
JPS56108267A (en) Insulated-gate field-effect semiconductor device
JPS57202784A (en) Semiconductor device
JPS56118371A (en) Semiconductor integrated circuit device
JPS5771179A (en) Input protective circuit device
JPS57121271A (en) Field effect transistor
JPS5667962A (en) Gate protection circuit of mos field effect transistor
JPS5772386A (en) Junction type field-effect semiconductor device
JPS54141578A (en) Semiconductor device
JPS5619657A (en) Semiconductor ic
JPS54156491A (en) Complementary field effect semiconductor device
JPS56138953A (en) Semiconductor device
JPS56110269A (en) P-n junction gate-type field effect transistor
JPS57199268A (en) Junction type field effect transistor
JPS5768071A (en) Semiconductor device with protective element