JPS6314507B2 - - Google Patents

Info

Publication number
JPS6314507B2
JPS6314507B2 JP55113437A JP11343780A JPS6314507B2 JP S6314507 B2 JPS6314507 B2 JP S6314507B2 JP 55113437 A JP55113437 A JP 55113437A JP 11343780 A JP11343780 A JP 11343780A JP S6314507 B2 JPS6314507 B2 JP S6314507B2
Authority
JP
Japan
Prior art keywords
region
electrode
type
conductivity type
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55113437A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5737883A (en
Inventor
Mikio Tatematsu
Kyoo Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP11343780A priority Critical patent/JPS5737883A/ja
Publication of JPS5737883A publication Critical patent/JPS5737883A/ja
Publication of JPS6314507B2 publication Critical patent/JPS6314507B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP11343780A 1980-08-20 1980-08-20 Compound semiconductor device Granted JPS5737883A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11343780A JPS5737883A (en) 1980-08-20 1980-08-20 Compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11343780A JPS5737883A (en) 1980-08-20 1980-08-20 Compound semiconductor device

Publications (2)

Publication Number Publication Date
JPS5737883A JPS5737883A (en) 1982-03-02
JPS6314507B2 true JPS6314507B2 (enrdf_load_html_response) 1988-03-31

Family

ID=14612194

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11343780A Granted JPS5737883A (en) 1980-08-20 1980-08-20 Compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS5737883A (enrdf_load_html_response)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5348487A (en) * 1976-10-14 1978-05-01 Fujitsu Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS5737883A (en) 1982-03-02

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