JPS5735391A - Manufacture of semiconductor laser - Google Patents

Manufacture of semiconductor laser

Info

Publication number
JPS5735391A
JPS5735391A JP8705080A JP8705080A JPS5735391A JP S5735391 A JPS5735391 A JP S5735391A JP 8705080 A JP8705080 A JP 8705080A JP 8705080 A JP8705080 A JP 8705080A JP S5735391 A JPS5735391 A JP S5735391A
Authority
JP
Japan
Prior art keywords
type
projection
current
layer
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8705080A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0213834B2 (enrdf_load_stackoverflow
Inventor
Mitsunori Sugimoto
Hidenori Nomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8705080A priority Critical patent/JPS5735391A/ja
Priority to US06/277,508 priority patent/US4429397A/en
Publication of JPS5735391A publication Critical patent/JPS5735391A/ja
Publication of JPH0213834B2 publication Critical patent/JPH0213834B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP8705080A 1980-06-26 1980-06-26 Manufacture of semiconductor laser Granted JPS5735391A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8705080A JPS5735391A (en) 1980-06-26 1980-06-26 Manufacture of semiconductor laser
US06/277,508 US4429397A (en) 1980-06-26 1981-06-26 Buried heterostructure laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8705080A JPS5735391A (en) 1980-06-26 1980-06-26 Manufacture of semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5735391A true JPS5735391A (en) 1982-02-25
JPH0213834B2 JPH0213834B2 (enrdf_load_stackoverflow) 1990-04-05

Family

ID=13904108

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8705080A Granted JPS5735391A (en) 1980-06-26 1980-06-26 Manufacture of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5735391A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62182584A (ja) * 1986-02-06 1987-08-10 株式会社イナックス ロ−ラ−ハ−スキルンにおける迅速焼成方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52100885A (en) * 1976-02-19 1977-08-24 Sony Corp Production of semiconductor device by liquid epitaxial growth
JPS53138689A (en) * 1977-05-06 1978-12-04 Western Electric Co Method of producing light emitting diode

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52100885A (en) * 1976-02-19 1977-08-24 Sony Corp Production of semiconductor device by liquid epitaxial growth
JPS53138689A (en) * 1977-05-06 1978-12-04 Western Electric Co Method of producing light emitting diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62182584A (ja) * 1986-02-06 1987-08-10 株式会社イナックス ロ−ラ−ハ−スキルンにおける迅速焼成方法

Also Published As

Publication number Publication date
JPH0213834B2 (enrdf_load_stackoverflow) 1990-04-05

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