JPH0213834B2 - - Google Patents

Info

Publication number
JPH0213834B2
JPH0213834B2 JP55087050A JP8705080A JPH0213834B2 JP H0213834 B2 JPH0213834 B2 JP H0213834B2 JP 55087050 A JP55087050 A JP 55087050A JP 8705080 A JP8705080 A JP 8705080A JP H0213834 B2 JPH0213834 B2 JP H0213834B2
Authority
JP
Japan
Prior art keywords
layer
substrate
current blocking
blocking layer
striped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55087050A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5735391A (en
Inventor
Mitsunori Sugimoto
Hidenori Nomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP8705080A priority Critical patent/JPS5735391A/ja
Priority to US06/277,508 priority patent/US4429397A/en
Publication of JPS5735391A publication Critical patent/JPS5735391A/ja
Publication of JPH0213834B2 publication Critical patent/JPH0213834B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
JP8705080A 1980-06-26 1980-06-26 Manufacture of semiconductor laser Granted JPS5735391A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8705080A JPS5735391A (en) 1980-06-26 1980-06-26 Manufacture of semiconductor laser
US06/277,508 US4429397A (en) 1980-06-26 1981-06-26 Buried heterostructure laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8705080A JPS5735391A (en) 1980-06-26 1980-06-26 Manufacture of semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5735391A JPS5735391A (en) 1982-02-25
JPH0213834B2 true JPH0213834B2 (enrdf_load_stackoverflow) 1990-04-05

Family

ID=13904108

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8705080A Granted JPS5735391A (en) 1980-06-26 1980-06-26 Manufacture of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5735391A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62182584A (ja) * 1986-02-06 1987-08-10 株式会社イナックス ロ−ラ−ハ−スキルンにおける迅速焼成方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52100885A (en) * 1976-02-19 1977-08-24 Sony Corp Production of semiconductor device by liquid epitaxial growth
US4169997A (en) * 1977-05-06 1979-10-02 Bell Telephone Laboratories, Incorporated Lateral current confinement in junction lasers

Also Published As

Publication number Publication date
JPS5735391A (en) 1982-02-25

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