JPS5735381A - Manufacture of ir detecting device - Google Patents

Manufacture of ir detecting device

Info

Publication number
JPS5735381A
JPS5735381A JP11152080A JP11152080A JPS5735381A JP S5735381 A JPS5735381 A JP S5735381A JP 11152080 A JP11152080 A JP 11152080A JP 11152080 A JP11152080 A JP 11152080A JP S5735381 A JPS5735381 A JP S5735381A
Authority
JP
Japan
Prior art keywords
film
insulating film
substrate
anodic oxide
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11152080A
Other languages
Japanese (ja)
Inventor
Shigeki Hamashima
Hiroshi Takigawa
Mitsuo Yoshikawa
Michiharu Ito
Tomoshi Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11152080A priority Critical patent/JPS5735381A/en
Publication of JPS5735381A publication Critical patent/JPS5735381A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To improve the yield rate by a method wherein an isolating film is formed, prior to ion injection, between a substrate and an insulating film to prevent insulating film constitutents from entering the substrate. CONSTITUTION:An anodic oxide film 12, an insulating film 13, and a photoresist film 14 are formed. Then, with the film 14 as a mask, the insulating film 13 is subjected to etching. After this, with the insulating film 13 as a patterned mask, the anodic oxide film 12 is subjected to etching. These processes are followed by the formation of an N type domain 15 by ion injecting B atoms into the substrate 11 with the anodic oxide film 12 and the insulating film 13 serving as masks.
JP11152080A 1980-08-12 1980-08-12 Manufacture of ir detecting device Pending JPS5735381A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11152080A JPS5735381A (en) 1980-08-12 1980-08-12 Manufacture of ir detecting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11152080A JPS5735381A (en) 1980-08-12 1980-08-12 Manufacture of ir detecting device

Publications (1)

Publication Number Publication Date
JPS5735381A true JPS5735381A (en) 1982-02-25

Family

ID=14563402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11152080A Pending JPS5735381A (en) 1980-08-12 1980-08-12 Manufacture of ir detecting device

Country Status (1)

Country Link
JP (1) JPS5735381A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6332970A (en) * 1986-07-25 1988-02-12 Fujitsu Ltd Manufacture of semiconductor device
JPH02272765A (en) * 1989-04-14 1990-11-07 Nec Corp Array type infrared ray detector

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6332970A (en) * 1986-07-25 1988-02-12 Fujitsu Ltd Manufacture of semiconductor device
JPH02272765A (en) * 1989-04-14 1990-11-07 Nec Corp Array type infrared ray detector

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