JPS5538085A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5538085A
JPS5538085A JP11207678A JP11207678A JPS5538085A JP S5538085 A JPS5538085 A JP S5538085A JP 11207678 A JP11207678 A JP 11207678A JP 11207678 A JP11207678 A JP 11207678A JP S5538085 A JPS5538085 A JP S5538085A
Authority
JP
Japan
Prior art keywords
opening
film
emulsion type
resin
impurities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11207678A
Other languages
Japanese (ja)
Other versions
JPS6210007B2 (en
Inventor
Manzo Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11207678A priority Critical patent/JPS5538085A/en
Publication of JPS5538085A publication Critical patent/JPS5538085A/en
Publication of JPS6210007B2 publication Critical patent/JPS6210007B2/ja
Granted legal-status Critical Current

Links

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  • Weting (AREA)

Abstract

PURPOSE: To diffuse impurities correctly only through specified openings by forming a protective film on a intermediate film which acts to smooth unevenness, in order to diffuse impurities through an opening on an insulation film formed on a semiconductor substrate.
CONSTITUTION: An insulation film 22 and openings 23,24 are formed on a substrate 21. Emulsion type oxides, for example, are coated, the coated film on the film 22 is removed and the specified opening 23 is closed by photosensitive resin 25. Then the emulsion type oxide 26 in the opening 24 is removed using resin 25 as a protective film and then the resin is removed, the emulsion type oxide 27 in the opening 23 is allowed to remain and impurities are introduced only into the opening 24 by the ion injection method.
COPYRIGHT: (C)1980,JPO&Japio
JP11207678A 1978-09-11 1978-09-11 Production of semiconductor device Granted JPS5538085A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11207678A JPS5538085A (en) 1978-09-11 1978-09-11 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11207678A JPS5538085A (en) 1978-09-11 1978-09-11 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5538085A true JPS5538085A (en) 1980-03-17
JPS6210007B2 JPS6210007B2 (en) 1987-03-04

Family

ID=14577462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11207678A Granted JPS5538085A (en) 1978-09-11 1978-09-11 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5538085A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007141940A (en) * 2005-11-15 2007-06-07 Nissan Motor Co Ltd Method of manufacturing composite impurity structure, semiconductor device, mosfet transistor, and insulated gate bipolar transistor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01242111A (en) * 1988-03-23 1989-09-27 Kurita Mach Mfg Co Ltd Hanging device for filter medium in filter press

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50138769A (en) * 1974-04-23 1975-11-05
JPS5391676A (en) * 1977-01-24 1978-08-11 Matsushita Electric Ind Co Ltd Manufacture for semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50138769A (en) * 1974-04-23 1975-11-05
JPS5391676A (en) * 1977-01-24 1978-08-11 Matsushita Electric Ind Co Ltd Manufacture for semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007141940A (en) * 2005-11-15 2007-06-07 Nissan Motor Co Ltd Method of manufacturing composite impurity structure, semiconductor device, mosfet transistor, and insulated gate bipolar transistor

Also Published As

Publication number Publication date
JPS6210007B2 (en) 1987-03-04

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