JPS5252576A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5252576A
JPS5252576A JP12859875A JP12859875A JPS5252576A JP S5252576 A JPS5252576 A JP S5252576A JP 12859875 A JP12859875 A JP 12859875A JP 12859875 A JP12859875 A JP 12859875A JP S5252576 A JPS5252576 A JP S5252576A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
oxide film
film
psg film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12859875A
Other languages
Japanese (ja)
Other versions
JPS584817B2 (en
Inventor
Hitoshi Hasegawa
Motoo Nakano
Kunihiko Wada
Takashi Matsumoto
Shigeru Yamaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP50128598A priority Critical patent/JPS584817B2/en
Publication of JPS5252576A publication Critical patent/JPS5252576A/en
Publication of JPS584817B2 publication Critical patent/JPS584817B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To prevent the disconnection of wiring to be formed later and reduce the steps of process through diffusion of P by provididng an oxide film and PSG film on a semiconductor element, opening a window therein, and melting the PSG film in gas containing P thus forming a taper to the serration of the oxide film.
COPYRIGHT: (C)1977,JPO&Japio
JP50128598A 1975-10-25 1975-10-25 hand tai souchi no seizou houhou Expired JPS584817B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50128598A JPS584817B2 (en) 1975-10-25 1975-10-25 hand tai souchi no seizou houhou

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50128598A JPS584817B2 (en) 1975-10-25 1975-10-25 hand tai souchi no seizou houhou

Publications (2)

Publication Number Publication Date
JPS5252576A true JPS5252576A (en) 1977-04-27
JPS584817B2 JPS584817B2 (en) 1983-01-27

Family

ID=14988720

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50128598A Expired JPS584817B2 (en) 1975-10-25 1975-10-25 hand tai souchi no seizou houhou

Country Status (1)

Country Link
JP (1) JPS584817B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57106148A (en) * 1980-12-24 1982-07-01 Fujitsu Ltd Manufacture of semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62182508U (en) * 1986-05-09 1987-11-19
JPS63182188U (en) * 1987-05-15 1988-11-24

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4911029A (en) * 1972-05-25 1974-01-31

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4911029A (en) * 1972-05-25 1974-01-31

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57106148A (en) * 1980-12-24 1982-07-01 Fujitsu Ltd Manufacture of semiconductor device
JPS6157703B2 (en) * 1980-12-24 1986-12-08 Fujitsu Ltd

Also Published As

Publication number Publication date
JPS584817B2 (en) 1983-01-27

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