JPS5735318A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5735318A JPS5735318A JP11131780A JP11131780A JPS5735318A JP S5735318 A JPS5735318 A JP S5735318A JP 11131780 A JP11131780 A JP 11131780A JP 11131780 A JP11131780 A JP 11131780A JP S5735318 A JPS5735318 A JP S5735318A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- diffused layer
- attaching
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000002844 melting Methods 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910000838 Al alloy Inorganic materials 0.000 abstract 1
- 229910021364 Al-Si alloy Inorganic materials 0.000 abstract 1
- 229910002796 Si–Al Inorganic materials 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11131780A JPS5735318A (en) | 1980-08-12 | 1980-08-12 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11131780A JPS5735318A (en) | 1980-08-12 | 1980-08-12 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5735318A true JPS5735318A (en) | 1982-02-25 |
JPH0126172B2 JPH0126172B2 (ko) | 1989-05-22 |
Family
ID=14558148
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11131780A Granted JPS5735318A (en) | 1980-08-12 | 1980-08-12 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5735318A (ko) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61283174A (ja) * | 1985-06-07 | 1986-12-13 | Kanegafuchi Chem Ind Co Ltd | 耐熱性薄膜光電変換素子およびその製法 |
JPS62111421A (ja) * | 1985-11-09 | 1987-05-22 | Mitsubishi Electric Corp | 金属シリサイド膜組成比制御方法 |
JPS62112323A (ja) * | 1985-09-11 | 1987-05-23 | テキサス インスツルメンツ インコ−ポレイテツド | 半導体面に接触を形成する方法 |
JPS62160745A (ja) * | 1986-01-09 | 1987-07-16 | Fuji Electric Co Ltd | 半導体装置 |
JPS6439775A (en) * | 1987-08-06 | 1989-02-10 | Fuji Electric Co Ltd | Formation of electrode film of semiconductor device |
-
1980
- 1980-08-12 JP JP11131780A patent/JPS5735318A/ja active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61283174A (ja) * | 1985-06-07 | 1986-12-13 | Kanegafuchi Chem Ind Co Ltd | 耐熱性薄膜光電変換素子およびその製法 |
JPS62112323A (ja) * | 1985-09-11 | 1987-05-23 | テキサス インスツルメンツ インコ−ポレイテツド | 半導体面に接触を形成する方法 |
JPS62111421A (ja) * | 1985-11-09 | 1987-05-22 | Mitsubishi Electric Corp | 金属シリサイド膜組成比制御方法 |
JPS62160745A (ja) * | 1986-01-09 | 1987-07-16 | Fuji Electric Co Ltd | 半導体装置 |
JPS6439775A (en) * | 1987-08-06 | 1989-02-10 | Fuji Electric Co Ltd | Formation of electrode film of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPH0126172B2 (ko) | 1989-05-22 |
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